是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | O-LALF-W2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.84 |
Is Samacsys: | N | 其他特性: | HIGH RELIABILITY |
最小击穿电压: | 15.2 V | 击穿电压标称值: | 16 V |
外壳连接: | ISOLATED | 最大钳位电压: | 22.3 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JESD-30 代码: | O-LALF-W2 |
最大非重复峰值反向功率耗散: | 500 W | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | BIDIRECTIONAL |
最大功率耗散: | 2 W | 认证状态: | Qualified |
最大重复峰值反向电压: | 12.2 V | 子类别: | Transient Suppressors |
表面贴装: | NO | 技术: | AVALANCHE |
端子形式: | WIRE | 端子位置: | AXIAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANS1N6111AUS | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 12.2V V(RWM), Bidirectional, 1 Element, Silicon, HER | |
JANS1N6111AUS | SENSITRON |
获取价格 |
500 W Transient Voltage Suppressor SM | |
JANS1N6111US | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 500W, Bidirectional, 1 Element, Silicon, | |
JANS1N6111US | SEMTECH |
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Trans Voltage Suppressor Diode, 500W, Bidirectional, 1 Element, Silicon, | |
JANS1N6112 | SEMTECH |
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Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Bidirectional, 2 Element, Silicon, HER | |
JANS1N6112 | MICROSEMI |
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BIDIRECTIONAL TRANSIENT SUPPRESSORS | |
JANS1N6112A | MICROSEMI |
获取价格 |
BIDIRECTIONAL TRANSIENT SUPPRESSORS | |
JANS1N6112A | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Bidirectional, 2 Element, Silicon, HER | |
JANS1N6112A | SENSITRON |
获取价格 |
500 W Transient Voltage Suppressor | |
JANS1N6112AUS | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Unidirectional, 1 Element, Silicon, HE |