Datasheet > JANKCD1N3070

JANKCD1N3070

更新时间： 2024-06-27 12:07:43

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
3页	99K
描述
Small Signal/Switching Diodes

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中文翻译

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数据手册

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JANKCD1N3070 数据手册

JANHCD1N3070, JANKCD1N3070

SENSITRON

SMALL SIGNAL/COMPUTER

DIODE CHIP

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 6119, REV -

SMALL SIGNAL / COMPUTER DIODE CHIP

FEATURES / BENEFITS:

✓

Die fabricated on a MIL-PRF-19500 JANKCD/JANHCD qualified manufacturing line

Class H and class K element evaluation per MIL-PRF-19500/169

All ratings are @ T_A= 25 °C unless otherwise specified

ELECTRICAL CHARACTERISTICS:

MAXIMUM RATINGS

ALL RATINGS ARE AT T_A= 25 °C UNLESS OTHERWISE SPECIFIED

RATING

SYMBOL

V_BR

MAX.

UNITS

Volts

BREAKDOWN VOLTAGE

WORKING PEAK REVERSE VOLTAGE

(I_R= 100 A)

200

V_RWM

Volts

175

100

AVERAGE RECTIFIED FORWARD CURRENT

PEAK SINGLE CYCLE SURGE CURRENT (PEAK)

(T_A=75^oC)

I_o

(t_p= 1.0s)

500

2.0

I_FSM

(t_p= 1.0µs)

MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE

T_{op, stg}

-65 to +175

°C

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC

SYMBOL

MAX.

UNITS

MAXIMUM FORWARD VOLTAGE DROP

(I_F= 100 mA dc)

(T_A=-55^oC, I_F= 100 mA dc)

V_F1

1.0

Volt

V_F2

I_R1

1.2

0.1

Volt

REVERSE CURRENT

CAPACITANCE

µA dc

(V_R= V_RWM

(T_A=+150^oC, V_R= V_RWM

(V_R= 0 Vdc; V_sig=50 mV_(p-p)max_,f = 1 MHz)

(I_F= I_R= 30 mA, I_RR= 3mA)

)

I_R2

C_T1

t_rr

100

5.0

µA dc

MAXIMUM REVERSE RECOVERY TIME

12 3

中文翻译

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