Datasheet > JANHCB1N992B

JANHCB1N992B

更新时间： 2024-11-04 08:15:39

品牌	Logo	应用领域
CDI-DIODE		/
页数	文件大小	规格书
28页	208K
描述
DIODE VOLTAGE REGULATOR DIODE, Voltage Regulator Diode

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JANHCB1N992B 数据手册

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 6 January 2006.

INCH-POUND

MIL-PRF-19500/117N

6 October 2005

SUPERSEDING

MIL-PRF-19500/117M

13 January 2004

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,

TYPES 1N962B-1 THROUGH 1N992B-1, AND 1N962BUR-1 THROUGH 1N992BUR-1, 1N962C-1 THROUGH

1N992C-1, AND 1N962CUR-1 THROUGH 1N992CUR-1, AND 1N962D-1 THROUGH 1N992D-1, 1N962DUR-1

THROUGH 1N992DUR-1, JAN, JANTX, JANTXV, AND JANHC

JANS level (see 6.4).

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall

consist of this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator

diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided

for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for

each unencapsulated device type.

1.2 Physical dimensions. See figure 1 (similar to DO-35), figure 2 ( DO-213AA), and figure 3 for (JANHC die).

* 1.3 Maximum ratings. Maximum ratings are as shown in maximum and primary test ratings (see 3.8) herein and

as follows:

a. P_TL= 500 mW, (DO-35) at T_L= +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink

at L = .375 inch (9.53 mm). Derate I_Zto 0.0 mA dc at +175°C.

b. P_TEC= 500 mW, (DO-213AA) at T_EC= +125°C, derate to 0 at +175°C. -65°C ≤ T_J≤ +175°C; -65°C ≤ T_STG

+175°C.

≤

c. P_T(PCB)= 500 mW, T_A= 75°C.

* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,

ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since

contact information can change, you may want to verify the currency of this address information using the ASSIST

Online database at http://assist.daps.dla.mil.

AMSC N/A

FSC 5961

12 3 4 5 6 7...28

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与JANHCB1N992B相关器件

型号	品牌	获取价格	描述	数据表
JANHCB2N2221A	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 800MA I(C) \| TO-18
JANHCB2N2222A	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 800MA I(C) \| TO-18
JANHCB2N2484	STMICROELECTRONICS	获取价格	SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB
JANHCB2N2907A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, DIE-3
JANHCBF2N2904	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-205A
JANHCBF2N2906A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, DIE-3
JANHCBF2N2907A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, DIE-3
JANHCBF2N7262	MICROSEMI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
JANHCBF2N7382	MICROSEMI	获取价格	Transistor
JANHCBF2N7389	MICROSEMI	获取价格	Transistor

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