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JANHC2N6213 PDF预览

JANHC2N6213

更新时间： 2024-11-01 23:59:59
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19页 116K
描述
TRANSISTOR | BJT | PNP | 350V V(BR)CEO | 2A I(C) | TO-66

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JANHC2N6213 数据手册

 浏览型号JANHC2N6213的Datasheet PDF文件第2页浏览型号JANHC2N6213的Datasheet PDF文件第3页浏览型号JANHC2N6213的Datasheet PDF文件第4页浏览型号JANHC2N6213的Datasheet PDF文件第5页浏览型号JANHC2N6213的Datasheet PDF文件第6页浏览型号JANHC2N6213的Datasheet PDF文件第7页 
INCH-POUND  
The documentation and process  
conversion measures necessary to  
comply with this revision shall be  
completed by 14 September 2001.  
MIL-PRF-19500/461D  
14 June 2001  
SUPERSEDING  
MIL-PRF-19500/461C  
29 May 1998  
PERFORMANCE SPECIFICATION  
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER  
TYPE 2N6211, 2N6212, 2N6213, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for PNP silicon, high-voltage. Four levels of  
product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product  
assurance are provided for each unencapsulated device type.  
1.2 Physical dimensions. See figure 1 (TO-66), and figure 2, JANHC and JANKC (die) dimensions.  
1.3 Maximum ratings. Unless otherwise specified, T = +25°C.  
C
Type  
P
(1)  
P
(2)  
V
V
V
I
I
T
OP  
and T  
R
(max)  
Z
θJX  
T
T
CBO  
CEO  
EBO  
B
C
STG  
θJC  
T
= +25°C  
T
= +25°C  
A
C
W
W
V dc  
V dc  
V dc  
A dc  
A dc  
°C  
°C/W  
°C/W  
2N6211  
2N6212  
2N6213  
3.0  
3.0  
3.0  
35  
35  
35  
275  
350  
400  
225  
300  
350  
6.0  
6.0  
6.0  
1.0  
1.0  
1.0  
2.0  
2.0  
2.0  
-65 to +200  
-65 to +200  
-65 to +200  
5.0  
5.0  
5.0  
1.75  
1.75  
1.75  
(1) Derate linearly at 17.1 mW/°C for T > +25°C.  
A
(2) Derate linearly at 200 mW/°C for T > +25°C.  
C
1.4 Primary electrical characteristics. Unless otherwise specified, T = +25°C.  
C
Pulse response  
h
(1)  
V
(1)  
C
|h |  
fe  
f = 5 MHz  
= 0.2 A dc  
FE1  
CE(SAT)  
obo  
100 kHz ≤ f ≤ 1 MHz  
= 10 V dc  
V
= 5 V dc  
I
= 1.0 A dc  
CE  
C
I
t
t
off  
V
I
= -0.125 A dc  
2N6212  
V dc  
C
on  
CB  
B
2N6211  
2N6213  
V dc  
I
= 1 A dc  
I
= 0  
V = 10 V dc  
CE  
C
E
V dc  
pF  
µs  
µs  
Minimum  
Maximum  
30  
175  
4
20  
1.4  
1.6  
2.0  
220  
0.6  
3.1  
(1) Pulsed (see 4.5.1).  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in  
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,  
Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal  
(DD Form 1426) appearing at the end of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
1234567...19

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