Datasheet > JANHC1N6761

JANHC1N6761

更新时间： 2024-11-02 07:23:47

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
2页	41K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon,

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JANHC1N6761 数据手册

•

1N5819 AND 1N6761 AVAILABLE IN JANHC AND JANKC PER MIL

PRF-19500/586

CD6759 thru CD6761

and

CD1A20 thru CD1A100

and

CD5817 thru CD5819

• 1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS

• SILICON DIOXIDE PASSIVATED

• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,

WITH THE EXCEPTION OF SOLDER REFLOW

MAXIMUM RATINGS

Operating Temperature: -55°C to +125°C

Storage Temperature: -55°C to +150°C

Average Recti½ed Forward Current: 1.0 AMP @ +55°C

Derating: 14.3 mA / °C above +55°C

BACKSIDE IS CATHODE

FIGURE 1

WORKING PEAK

REVERSE

MAXIMUM REVERSE

LEAKAGE CURRENT

AT RATED VOLTAGE

CDI

TYPE

MAXIMUM FORWARD VOLTAGE

DESIGN DATA

VOLTAGE

NUMBER

RWM

@0.1A

@1.0A

@25°C

I @100°C

METALLIZATION:

VOLTS

0.36

VOLTS

0.60

5.0

Top: (Anode) ........................Al

CD5817

CD5818

CD5819

JHC, JKC

5819

0.10

0.05

Back: (Cathode) ....................Au

AL THICKNESS................25,000 Å Min

GOLD THICKNESS............4,000 Å Min

CHIP THICKNESS......................10 Mils

0.36

0.60

0.36

0.60

0.34

0.49

CD6759

CD6760

CD6761

JHC, JKC

6761

0.38

0.75

0.69

0.10

6.0

100

6.0

TOLERANCES: ALL

Dimensions + 2 mils

12.0

CD1A20

CD1A30

CD1A40

CD1A50

CD1A60

CD1A80

CD1A100

0.36

0.38

0.60

0.75

0.10

5.0

12.0

100

6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841

PHONE (978) 620-2600

WEBSITE: http://www.microsemi.com

FAX (978) 689-0803

219

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