5秒后页面跳转
JANHC1N6677 PDF预览

JANHC1N6677

更新时间: 2024-11-02 05:24:59
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
2页 47K
描述
Rectifier Diode, Schottky, 1 Element, 0.2A, Silicon, DIE-2

JANHC1N6677 数据手册

 浏览型号JANHC1N6677的Datasheet PDF文件第2页 
• IN6677 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/610  
• 0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIER CHIPS  
• SILICON DIOXIDE PASSIVATED  
CD6675 thru CD6677  
and  
CD0.2A20 thru CDO.2A40  
and  
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES ,  
WITH THE EXCEPTION OF SOLDER REFLOW  
CD0.5A20 thru CDO.5A40  
MAXIMUM RATINGS, 0.2 AMP DEVICES  
24 MILS  
16 MILS  
Operating Temperature: -65°C to +125°C  
Storage Temperature: -65°C to +150°C  
Average Rectified Forward Current: 0.2 AMP @ 75°C  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.  
MAXIMUM  
CDI  
TYPE  
NUMBER  
WORKING PEAK  
REVERSE  
VOLTAGE  
MAXIMUM REVERSE  
LEAKAGE CURRENT  
AT RATED VOLTAGE  
CAPACITANCE @  
MAXIMUM FORWARD VOLTAGE  
V
R
= 0 VOLTS  
f =1.0 MHz  
V
RWM  
V
@ 20 mA  
V
@ 200 mA  
V
@ 630 mA  
I
@ +25°C  
I @ +100°C  
R
C
T
F
F
F
R
VOLTS  
20  
VOLTS  
0.37  
VOLTS  
0.50  
VOLTS  
0.70  
µ A  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
mA  
0.6  
0.6  
0.6  
0.6  
0.6  
0.6  
PICO FARADS  
CD6675  
50  
50  
50  
50  
50  
50  
CD6676  
30  
0.37  
0.50  
0.70  
CD6677  
40  
0.37  
0.50  
0.70  
BACKSIDE IS CATHODE  
CD0.2A20  
CD0.2A30  
CD0.2A40  
20  
0.37  
0.50  
0.70  
FIGURE 1  
30  
0.37  
0.50  
0.70  
40  
0.37  
0.50  
0.70  
DESIGN DATA  
METALLIZATION:  
MAXIMUM RATINGS, 0.5 AMP DEVICES  
Top: (Anode)................................Al  
Back: (Cathode)............................Au  
Operating Temperature: -65°C to +125°C  
Storage Temperature: -65°C to +150°C  
AL THICKNESS..........25,000 Å Min  
GOLD THICKNESS... ...4,000 Å Min  
CHIP THICKNESS............. ...10 Mils  
Average Rectified Forward Current: 0.5 AMP @ 75°C  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.  
MAXIMUM  
CAPACITANCE @  
= 0 VOLTS  
TOLERANCES: ALL  
Dimensions + 2 mils  
CDI  
TYPE  
NUMBER  
WORKING PEAK  
REVERSE  
MAXIMUM  
FORWARD VOLTAGE  
MAXIMUM REVERSE  
LEAKAGE CURRENT  
AT RATED VOLTAGE  
V
R
VOLTAGE  
f =1.0 MHz  
V
RWM  
V
@ 0.1A  
V
@ 0.5A  
I
@ +25°C  
I @ +100°C  
R
C
T
F
F
R
VOLTS  
20  
VOLTS  
0.50  
VOLTS  
0.65  
µ A  
10.0  
10.0  
10.0  
mA  
1.0  
1.0  
1.0  
PICO FARADS  
CD0.5A20  
CD0.5A30  
CD0.5A40  
50  
50  
50  
30  
0.50  
0.65  
40  
0.50  
0.65  
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841  
PHONE (978) 620-2600  
WEBSITE: http://www.microsemi.com  
FAX (978) 689-0803  
217  

与JANHC1N6677相关器件

型号 品牌 获取价格 描述 数据表
JANHC1N6702 CDI-DIODE

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, Silicon,
JANHC1N6761 MICROSEMI

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon,
JANHC1N747A CDI-DIODE

获取价格

Zener Diode, 3.6V V(Z), 5%, 0.5W, Silicon, Unidirectional, DIE-1
JANHC1N748A CDI-DIODE

获取价格

Zener Diode, 3.9V V(Z), 5%, 0.5W, Silicon, Unidirectional, DIE-1
JANHC1N749A CDI-DIODE

获取价格

Zener Diode, 4.3V V(Z), 5%, 0.5W, Silicon, Unidirectional, DIE-1
JANHC1N752A CDI-DIODE

获取价格

Zener Diode, 5.6V V(Z), 5%, 0.5W, Silicon, Unidirectional, DIE-1
JANHC1N753A CDI-DIODE

获取价格

Zener Diode, 6.2V V(Z), 5%, 0.5W, Silicon, Unidirectional, DIE-1
JANHC1N754A CDI-DIODE

获取价格

Zener Diode, 6.8V V(Z), 5%, 0.5W, Silicon, Unidirectional, DIE-1
JANHC1N755A CDI-DIODE

获取价格

Zener Diode, 7.5V V(Z), 5%, 0.5W, Silicon, Unidirectional, DIE-1
JANHC1N821 CDI-DIODE

获取价格

Zener Diode, 6.2V V(Z), 4.8%, Silicon,