生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.61 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 15 | JEDEC-95代码: | TO-206AA |
JESD-30 代码: | O-MBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
参考标准: | MIL-19500 | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N3700UB | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | |
JAN2N3715 | MICROSEMI |
获取价格 |
NPN HIGH POWER SILICON TRANSISTOR | |
JAN2N3716 | MICROSEMI |
获取价格 |
NPN HIGH POWER SILICON TRANSISTOR | |
JAN2N3735 | RAYTHEON |
获取价格 |
Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39, | |
JAN2N3735L | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-5VAR | |
JAN2N3737 | RAYTHEON |
获取价格 |
Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39, | |
JAN2N3737UB | ETC |
获取价格 |
BJT | |
JAN2N3739 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 250MA I(C) | TO-66 | |
JAN2N3740 | MICROSEMI |
获取价格 |
PNP POWER SILICON TRANSISTOR | |
JAN2N3741 | MICROSEMI |
获取价格 |
PNP POWER SILICON TRANSISTOR |