5秒后页面跳转
JAN2N3700 PDF预览

JAN2N3700

更新时间: 2024-11-12 11:14:55
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
8页 278K
描述
MIL-PRF-19500/391: 80 V, 1 A NPN Small Signal Transistor

JAN2N3700 技术参数

是否无铅: 含铅生命周期:Lifetime Buy
零件包装代码:BCY包装说明:CYLINDRICAL, O-MBCY-W3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.09Is Samacsys:N
Base Number Matches:1

JAN2N3700 数据手册

 浏览型号JAN2N3700的Datasheet PDF文件第2页浏览型号JAN2N3700的Datasheet PDF文件第3页浏览型号JAN2N3700的Datasheet PDF文件第4页浏览型号JAN2N3700的Datasheet PDF文件第5页浏览型号JAN2N3700的Datasheet PDF文件第6页浏览型号JAN2N3700的Datasheet PDF文件第7页 
2N3019, 2N3019S, 2N3700  
80V, 1A NPN Small Signal  
Transistor  
Features  
MILPRF19500/391Qualified  
http://onsemi.com  
Available as JAN, JANTX, and JANTXV  
COLLECTOR  
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
2
BASE  
Characteristic  
CollectorEmitter Voltage  
CollectorBase Voltage  
Symbol  
Value  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
mW  
V
CEO  
V
CBO  
V
EBO  
1
140  
7.0  
EMITTER  
EmitterBase Voltage  
Collector Current Continuous  
I
C
1.0  
Total Device Dissipation @ T = 25°C  
P
P
A
T
2N3019, 2N3019S  
2N3700  
800  
500  
Total Device Dissipation @ T = 25°C  
W
C
T
2N3019, 2N3019S  
5.0  
1.0  
2N3700  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to  
+200  
°C  
J
stg  
TO5  
CASE 205AA  
STYLE 1  
TO39  
CASE 205AB  
STYLE 1  
TO18  
CASE 206AA  
STYLE 1  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
2N3019  
2N3019S  
2N3700  
Thermal Resistance, Junction to Ambient  
2N3019, 2N3019S  
R
°C/W  
q
JA  
195  
325  
2N3700  
ORDERING INFORMATION  
Thermal Resistance, Junction to Case  
2N3019, 2N3019S  
R
°C/W  
q
JC  
Device  
Package  
Shipping  
30  
150  
2N3700  
JAN2N3019  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
JANTX2N3019  
JANTXV2N3019  
JAN2N3019S  
TO5  
Bulk  
JANTX2N3019S  
JANTXV2N3019S  
JAN2N3700  
TO39  
TO18  
Bulk  
Bulk  
JANTX2N3700  
JANTXV2N3700  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
August, 2012 Rev. 2  
2N3019/D  

JAN2N3700 替代型号

型号 品牌 替代类型 描述 数据表
JAN2N3700 RAYTHEON

功能相似

Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-18,
BF421 NXP

功能相似

PNP high-voltage transistors

与JAN2N3700相关器件

型号 品牌 获取价格 描述 数据表
JAN2N3700S MICROSEMI

获取价格

LOW POWER NPN SILICON TRANSISTOR
JAN2N3700UB ETC

获取价格

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C)
JAN2N3715 MICROSEMI

获取价格

NPN HIGH POWER SILICON TRANSISTOR
JAN2N3716 MICROSEMI

获取价格

NPN HIGH POWER SILICON TRANSISTOR
JAN2N3735 RAYTHEON

获取价格

Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39,
JAN2N3735L ETC

获取价格

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-5VAR
JAN2N3737 RAYTHEON

获取价格

Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39,
JAN2N3737UB ETC

获取价格

BJT
JAN2N3739 ETC

获取价格

TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 250MA I(C) | TO-66
JAN2N3740 MICROSEMI

获取价格

PNP POWER SILICON TRANSISTOR