Datasheet > JAN2N1772A

JAN2N1772A

更新时间： 2024-10-02 04:57:47

品牌	Logo	应用领域
POWEREX		栅栅极
页数	文件大小	规格书
11页	47K
描述
Silicon Controlled Rectifier, 7.38A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, SIMILAR TO TO-64, 2 PIN

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JAN2N1772A 数据手册

The documentation process conversion

measures necessary to comply with this

revision shall be completed by 17 January 1999

INCH-POUND

MIL-PRF-19500/168E

17 October 1998

SUPERSEDING

MIL-PRF-19500/168D

15 October 1997

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, THYRISTORS (CONTROLLED RECTIFIERS), SILICON

TYPES 2N1771A, 2N1772A, 2N1774A, 2N1776A, 2N1777A, JAN, JANTX, AND JANTXV

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for PNPN, silicon power, reverse-blocking triode thyristors. Three

levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (similar to TO-64).

1.3 Maximum ratings.

Limits

d /d 3/

v t

(repetitive)

TSM

STG

= +105 C

(180 condition angle)

V(pk)

v/ s

Min

-65

+150

-65

+150

Max

4.7

1/ This average forward current is for a maximum case temperature of +105 C, and 180 electrical degrees of conduction.

2/ Surge rating is non-recurrent and applies only with device in the ‘on’ conducting state. The peak rate of surge current must

not exceed 40 amperes/microsecond during the first 10 s after switching from the “off” (blocking) state to the “on”

(conducting) state. This time is measured from the point where the thyristor voltage has decayed to 90 percent of its initial

blocking value.

3/ T = -65 to +150 C.

1.4 Primary electrical characteristics.

1.4.1 Primary electrical characteristics (common to all types).

Limits

off

mA dc

V dc

mA dc

Min

Max

0.2

2.0

1.85

1/ T = -65 to +150 C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this

document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street,

Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the

end of this document or by letter.

AMSC N/A

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

FSC 5961

12 3 4 5 6 7...11

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与JAN2N1772A相关器件

型号	品牌	获取价格	描述	数据表
JAN2N1774A	POWEREX	获取价格	Silicon Controlled Rectifier, 4700mA I(T), 200V V(DRM)
JAN2N1792	INFINEON	获取价格	Silicon Controlled Rectifier, 78.5A I(T)RMS, 70000mA I(T), 50V V(DRM), 50V V(RRM), 1 Eleme
JAN2N1795	INFINEON	获取价格	Silicon Controlled Rectifier, 78.5A I(T)RMS, 70000mA I(T), 200V V(DRM), 200V V(RRM), 1 Ele
JAN2N1797	INFINEON	获取价格	Silicon Controlled Rectifier, 78.5A I(T)RMS, 70000mA I(T), 300V V(DRM), 300V V(RRM), 1 Ele
JAN2N1798	INFINEON	获取价格	Silicon Controlled Rectifier, 78.5A I(T)RMS, 70000mA I(T), 400V V(DRM), 400V V(RRM), 1 Ele
JAN2N1800	INFINEON	获取价格	Silicon Controlled Rectifier, 78.5A I(T)RMS, 70000mA I(T), 600V V(DRM), 600V V(RRM), 1 Ele
JAN2N1801	INFINEON	获取价格	Silicon Controlled Rectifier, 110A I(T)RMS, 700V V(DRM), 840V V(RRM), 1 Element, TO-208AD,
JAN2N1802	INFINEON	获取价格	Silicon Controlled Rectifier, 110A I(T)RMS, 800V V(DRM), 960V V(RRM), 1 Element, TO-208AD,
JAN2N1803	INFINEON	获取价格	Silicon Controlled Rectifier, 110A I(T)RMS, 900V V(DRM), 1080V V(RRM), 1 Element, TO-208AD
JAN2N1804	INFINEON	获取价格	Silicon Controlled Rectifier, 110A I(T)RMS, 1000V V(DRM), 1200V V(RRM), 1 Element, TO-208A

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