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JAN2N1131L

更新时间： 2024-11-26 23:59:59
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页数 文件大小 规格书
9页 54K
描述
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 600MA I(C) | TO-39VAR

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JAN2N1131L 数据手册

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The documentation and process  
conversion measures necessary to  
comply with this revision shall be  
completed by 4 November 1999.  
INCH-POUND  
MIL-PRF-19500/177F  
4 August 1999  
SUPERSEDING  
MIL-S-19500/177E  
8 February 1995  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER  
TYPES 2N1131, 2N1131L, 2N1132, 2N1132L, JAN AND JANTX  
This specification is approved for use by all Depart-  
ments and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for PNP silicon, low-power transistors. Two levels of product  
assurance are provided for each device type as specified in MIL-PRF-19500.  
1.2 Physical dimensions. See figure 1, 2N1131 and 2N1132 (TO-39), 2N1131L and 2N1132L (TO-5).  
1.3 Maximum ratings.  
P
T
1/  
P
T
2/  
V
CBO  
V
CEO  
V
EBO  
I
C
T
and T  
J
OP  
T
= +25°C  
T
= +25°C  
A
C
W
W
V dc  
50  
V dc  
40  
V dc  
5.0  
mA dc  
600  
°C  
2.0  
0.6  
-65 to +200  
1/ Derate linearly 11.4 mW/°C for T ³ +25°C.  
C
2/ Derate linearly 3.4 mW/°C for T ³ +25°C.  
A
1.4 Primary electrical characteristics.  
h
FE1  
1/  
h
fe1  
V
1/  
V
1/  
C
h
fe  
BE(SAT)  
CE(SAT)  
obo  
IC = 150 mA dc  
IB = 15 mA dc  
f = 1 MHz  
f = 20 MHz  
I = 50 mA dc  
C
V
= 10 V dc  
V
= 5.0 V dc  
I
C
= 150 mA dc  
= 15 mA dc  
CE  
CE  
I
C
= 150 mA dc  
I
C
= 1.0 mA dc  
f = 1 kHz  
I
B
V
= 10 V dc  
CB  
I
E
= 0  
V
CE  
= 10 V dc  
V dc  
V dc  
pF  
Min  
20  
30  
Max  
45  
90  
Min  
15  
30  
Max  
50  
90  
Min  
Max  
1.5  
1.5  
Min  
Max  
1.3  
1.3  
Min  
Max  
45  
45  
Min  
2.5  
3.0  
Max  
20  
20  
2N1131,L  
2N1132,L  
1/ Pulsed (see 4.4.1).  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document  
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH  
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this  
document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
1234567...9

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与JAN2N1131L相关器件

型号 品牌 获取价格 描述 数据表
JAN2N1132 RAYTHEON

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 		Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-39,
JAN2N1132 MOTOROLA

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 		Small Signal Bipolar Transistor, 0.6A I(C), 35V V(BR)CEO, 1-Element, PNP, Silicon, TO-205A
JAN2N1132A MOTOROLA

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 		600mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
JAN2N1132L ETC

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 		TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 600MA I(C) | TO-39VAR
JAN2N1165 ETC

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 		TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 25A I(C) | TO-41
JAN2N1183 ETC

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 		TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 3A I(C) | TO-8
JAN2N1183A ETC

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 		TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3A I(C) | TO-8
JAN2N1183B ETC

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 		TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 3A I(C) | TO-8
JAN2N1184 ETC

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 		TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 3A I(C) | TO-8
JAN2N1184A ETC

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 		TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3A I(C) | TO-8

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