生命周期: | Active | 零件包装代码: | TO-82 |
包装说明: | TO-82, 2 PIN | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.19 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 7.5 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
JESD-30 代码: | O-MBPM-D2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 极性/信道类型: | NPN |
功耗环境最大值: | 150 W | 最大功率耗散 (Abs): | 150 W |
认证状态: | Not Qualified | 参考标准: | MIL |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | SOLDER LUG | 端子位置: | BOTTOM |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 0.02 MHz |
VCEsat-Max: | 2.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N1016C | APITECH |
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Power Bipolar Transistor, 7.5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, | |
JAN2N1021A | ETC |
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TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 7A I(C) | TO-3 | |
JAN2N1022A | ETC |
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TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 7A I(C) | TO-3 | |
JAN2N1039 | ETC |
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TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 3A I(C) | TO-11VAR | |
JAN2N1041 | ETC |
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TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-11VAR | |
JAN2N1042 | ETC |
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TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3.5A I(C) | IST-3RT-1/2 | |
JAN2N1043 | ETC |
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TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 3.5A I(C) | IST-3RT-1/2 | |
JAN2N1044 | ETC |
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TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3.5A I(C) | IST-3RT-1/2 | |
JAN2N1045 | ETC |
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TRANSISTOR | BJT | PNP | 600V V(BR)CEO | 3.5A I(C) | IST-3RT-1/2 | |
JAN2N1047A | APITECH |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-57, |