Datasheet > JAN1N5814

JAN1N5814

更新时间： 2024-11-16 08:49:51

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
1页	56K
描述
Rectifier Diode, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

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JAN1N5814 数据手册

TECHNICAL DATA

FAST RECOVERY POWER RECTIFIER

Qualified per MIL-PRF-19500/ 478

Devices

Qualified Level

JAN

JANTX

JANTXV

1N5812

1N5812R

1N5814

1N5814R

1N5815

1N5815R

1N5816

1N5816R

MAXIMUM RATINGS

Ratings

1N5812 1N5814 1N5816

1N5812R 1N5814R 1N5816R

Symbol

Unit

Reverse Voltage

100

150

Vdc

Vpk

Adc

V_R

V_RWM

I_O

Working Peak Reverse Voltage

150

Average Forward Current

Forward Current Surge Peak T_C= +100⁰C

t_p= 8.3 ms

T_C= +100⁰C ⁽¹⁾

400

Adc

I_FSM

Reverse Recovery Time

⁰C

t_rr

T_J_,T

Operating & Storage Junction Temperature

-65 to +175

stg

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

⁰C/W

DO-203AA

(DO-4)

Thermal Resistance, Junction-to-Case

1) Derate linearly 250 mA/⁰C from +100⁰C to +150⁰C, & 300 mA/⁰C above +150⁰C

1.5

qJC

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Z_q

Min.

Max.

Unit

Thermal Impedance

⁰C/W

I_H³ rated I_O; t_H£ 250ms; 10 mA £ I_M£ 100 mA; t_MD= 250 ms (max)

1.35

Forward Voltage

t_p£ 8.3 ms, duty cycle £ 2.0% pulsed

I_F= 10 A (pk)

I_F= 20 A (pk)

V_F1

V_F2

Vdc

Vpk

0.860

0.950

Reverse Current

V_R= Rated V_R(See 1.3 of MIL-PRF-19500/478)

Breakdown Voltage

I_R

mAdc

I_R= 100 mAdc

1N5812, R

1N5814, R

1N5816, R

110

160

V_(BR)

Vdc

Junction Capacitance

V_R= 10 Vdc, V_SIG= 50 mVdc (p-p) max, f = 1.0 MHz

Forward Recovery Voltage

C_J

V_FR

t_rr

V(pk)

300

t_p³ 20 hs, t_r= 8.0 hs; I_F= 1,000 mA

2.2

Forward Recovery Time

I_F= 1,000 mA

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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JAN1N5814 替代型号

型号	品牌	替代类型	描述	数据表
MBR2045CT	GOOD-ARK	功能相似	Dual Schottky Barrier Rectifiers

与JAN1N5814相关器件

型号	品牌	获取价格	描述	数据表
JAN1N5814R	SENSITRON	获取价格	DESCRIPTION: 100 VOLT, 20 AMP, 35 NS HERMETIC RECTIFIER IN A DO-4 PACKAGE.
JAN1N5815R	MICROSEMI	获取价格	Rectifier Diode,
JAN1N5816	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 150V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
JAN1N5816	SENSITRON	获取价格	DESCRIPTION: 150 VOLT, 20 AMP, 35 NS HERMETIC RECTIFIER IN A DO-4 PACKAGE.
JAN1N5816R	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 150V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
JAN1N5819-1	SENSITRON	获取价格	HERMETIC AXIAL LEAD / MELF GENERAL PURPOSE RECTIFIER
JAN1N5819-1	CDI-DIODE	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-41, HERMETIC SEALED PACKAGE-2
JAN1N5819UR-1	CDI-DIODE	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-213AB, HERMETIC SEALED PACKAGE-2
JAN1N5819UR-1	SENSITRON	获取价格	HERMETIC AXIAL LEAD / MELF GENERAL PURPOSE RECTIFIER
JAN1N5819UR-1	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-213AB, HERMETIC SEALED PACKAGE-2