Datasheet > JAN1N5195US

JAN1N5195US

更新时间： 2024-11-16 07:36:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
15页	266K
描述
Rectifier Diode, 1 Element, 0.2A, 200V V(RRM),

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JAN1N5195US 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.70	风险等级：	5.74
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1 V	最大非重复峰值正向电流：	2 A
元件数量：	1	最高工作温度：	175 °C
最大输出电流：	0.2 A	最大重复峰值反向电压：	200 V
子类别：	Rectifier Diodes	表面贴装：	YES

JAN1N5195US 数据手册

INCH-POUND

MIL-PRF-19500/118H

19 July 2007

SUPERSEDING

MIL-PRF-19500/118G

22 June 2006

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 19 October 2007.

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, DIODE, SILICON,

TYPES 1N483B, 1N485B, 1N486B, 1N5194, 1N5194UR, 1N5194US, 1N5195, 1N5195UR,

1N5195US,1N5196, 1N5196UR, AND 1N5196US, JAN, JANTX, AND JANTXV

This specification is approved for use by all Departments and Agencies

of the Department of Defense.

The requirements for acquiring the product described herein shall consist

of this specification sheet and MIL-PRF-19500.

Types 1N483B, 1N485B, 1N486B are inactive for new design. See 6.4.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for silicon diodes. Three levels of product

assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1, figure 2 (DO-213AA), and figure 3.

1.3 Maximum ratings. T = +25°C unless otherwise specified.

T and

RM RWM

FSM

ΘJL

ΘJEC ΘJA(PCB)

(1) (2)

T =75°C

t = 1/120 s T

L =

.375 inch

(9.53 mm)

LD = 0

Type (1)

STG

150°C

= 25°C

V (pk) V (pk)

°C

°C/W

250

°C/W

1N483B

1N5194

1N5194UR

1N5194US

200

-65 to

+175

275

100

1N485B

1N5195

200

180

250

1N5195UR

1N5195US

100

1N486B

1N5196

250

225

250

1N5196UR

1N5196US

100

(1) The electrical characteristics for UR and US suffix devices are identical to their corresponding leaded devices

unless otherwise noted (applies only to the 1N5194, 1N5195, and 1N5196).

(2) Derate 1.2 mA/°C between 25°C and 150°C. Derate 2 mA/°C between 150°C and 175°C (see figure 4).

* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

semiconductor@dscc.dla.mil . Since contact information can change, you may want to verify the currency of

this address information using the ASSIST Online database at http://assist.daps.dla.mil .

AMSC N/A

FSC 5961

12 3 4 5 6 7...15

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与JAN1N5195US相关器件

型号	品牌	获取价格	描述	数据表
JAN1N5195X	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon,
JAN1N5196	CDI-DIODE	获取价格	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35, GLASS PACKAGE-2
JAN1N5196	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.2A, Silicon, GLASS PACKAGE-2
JAN1N5196-1	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35,
JAN1N5196UR	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-213AA, GLASS PACKAGE-2
JAN1N5196UR	CDI-DIODE	获取价格	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-213AA, GLASS PACKAGE-2
JAN1N5196UR-1	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-213AA,
JAN1N5283	MOTOROLA	获取价格	Current Regulator Diode, 0.22mA I(S), 1V V(L), Silicon, DO-204AA
JAN1N5283-1	MICROSEMI	获取价格	Current Regulator Diode, 0.22mA I(S), 1V V(L), Silicon, DO-35, DO-35, 2 PIN
JAN1N5283-1E3	MICROSEMI	获取价格	DIODE CURRENT REGULATOR DIODE, Current Regulator Diode

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