Datasheet > JAN1N39011AR

JAN1N39011AR

更新时间： 2024-11-12 09:30:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	73K
描述
Rectifier Diode, 1 Phase, 1 Element, 50A, 200V V(RRM), Silicon, DO-203AB, DO-5, 1PIN

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JAN1N39011AR 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

HIGH RELIABILITY FAST RECOVERY RECTIFIER

Qualified per MIL-PRF-19500/308

• 150°C Junction Temperature • VRRM 50 to 400 Volts

• 50 Amps Current Rating

DEVICES

LEVELS

JAN

JANTX

JANTXV

1N3909 1N3912

1N3910 1N3913

1N3910A 1N3913A 1N3911R 1N3909AR 1N3912AR

1N3911A 1N3909R 1N3912R 1N3910AR 1N3913AR

1N3911 1N3909A 1N3912A 1N3910R 1N3913R 1N3911AR

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

1N3909 / A / R / AR

Symbol

Value

Unit

Peak Reverse Voltage

1N3910 / A / R / AR

1N3911 / A / R / AR

1N3912 / A / R / AR

1N3913 / A / R / AR

100

200

300

400

V_RWM

1N3909 / A / R / AR

1N3910 / A / R / AR

1N3911 / A / R / AR

1N3912 / A / R / AR

1N3913 / A / R / AR

100

200

300

400

Peak Working Reverse Voltage

V_RRM

Average Forward Current, T_C= 100°

Peak Surge Forward Current @

I_F

1N3909 / R Thru 1N3913 / R

300

400

I_FSM

8.3ms, half sinewave, T_C= 100°C 1N3909A / AR Thru 1N3913A / AR

DO-203AB (DO-5)

Thermal Resistance, Junction to Case

0.8

°C/W

°C

R_θJC

T_j

Operating Case Temperature Range

-65°C to 150°C

-65°C to 175°C

Storage Temperature Range

T_STG

°C

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions Symbol

Min.

Max.

1.4

Unit

Forward Voltage

V_FM

I_FM= 50A, T_C= 25°C*

Forward Voltage

2.75

I_FM= 400A, T_C= 150°C**

Reverse Current

V_RM= 50V, T_C= 25°C

V_RM= 100V, T_C= 25°C

1N3909 / A / R

1N3910 / A / R

1N3911 / A / R

1N3912 / A / R

1N3913 / A / R

_RM= 200V, T_C= 25°C

V_RM= 300V, T_C= 25°C

_RM= 400V, T_C= 25°C

I_RM

μA

Reverse Current

V_RM= 50V, T_C= 150°C

1N3909 / A / R

1N3910 / A / R

1N3911 / A / R

1N3912 / A / R

1N3913 / A / R

_RM= 100V, T_C= 150°C

V_RM= 200V, T_C= 150°C

_RM= 300V, T_C= 150°C

I_RM

V_RM= 400V, T_C= 150°C

Reverse Recovery Time

V_RM= 30V, I_F= 1A

1N3909 / A Thru 1N3913 / A

1N3909A / AR Thru 1N3913A / AR

200

150

T_rr

* Pulse test: Pulse width 300 µsec, Duty cycle 2%

** Pulse test: Pulse width 800 µsec

T4-LDS-0144 Rev. 1 (091810)

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与JAN1N39011AR相关器件

型号	品牌	获取价格	描述	数据表
JAN1N39012AR	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 50A, 300V V(RRM), Silicon, DO-203AB, DO-5, 1PIN
JAN1N39013AR	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 50A, 400V V(RRM), Silicon, DO-203AB, DO-5, 1PIN
JAN1N3909	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 50A, 50V V(RRM), Silicon, DO-203AB, DO-5, 1PIN
JAN1N3909A	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 50A, 50V V(RRM), Silicon, DO-203AB, DO-5, 1PIN
JAN1N3909AR	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 50A, 50V V(RRM), Silicon, DO-203AB, DO-5, 1PIN
JAN1N3909E3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 30A, 50V V(RRM), Silicon, DO-5, DO-5, 1 PIN
JAN1N3909R	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 50A, 50V V(RRM), Silicon, DO-203AB, DO-5, 1PIN
JAN1N3909RE3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 30A, 50V V(RRM), Silicon, DO-5, DO-5, 1 PIN
JAN1N3910A	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 50A, 100V V(RRM), Silicon, DO-203AB, DO-5, 1PIN
JAN1N3910E3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 30A, 100V V(RRM), Silicon, DO-5, DO-5, 1 PIN

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