Datasheet > J211

J211

更新时间： 2024-09-24 11:13:35

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管
页数	文件大小	规格书
9页	361K
描述
N 沟道 RF 晶体管

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中文翻译

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J211 数据手册

DATA SHEET

www.onsemi.com

N-Channel RF Amplifier

J211, MMBFJ211

1. Drain

2. Source

3. Gate

Description

This device is designed for HF/VHF mixer/amplifier and

applications where process 50 is not adequate. Sufficient gain and

low−noise for sensitive receivers. Sourced from process 90.

Bent Lead

Tape & Reel

Ammo Packing

TO−92 3

CASE 135AR

MAXIMUM RATINGS (T = 25°C unless otherwise noted) (Notes 1, 2)

Symbol

Parameter

Drain−Gate Voltage

Value

Unit

Gate−Source Voltage

Forward Gate Current

−25

°C

NOTE: Source & Drain are

interchangeable

T , T

Operating and Storage Junction

Temperature Range

−55 to 150

STG

SOT−23

CASE 318−08

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady−state limits. onsemi should be consulted on applications

involving pulsed or low− duty−cycle operations.

MARKING DIAGRAM

211

YWW

THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Max

J211

(Note 3)

MMBFJ211

(Note 3)

62WM

Symbol

Parameter

Total Device Dissipation

Derate Above 25°C

Unit

350

2.8

225

1.8

−

J211−D74Z

MMBFJ211

mW/°C

°C/W

Thermal Resistance,

Junction−to−Case

125

J211, 62W = Device Code

= Assembly Site

= Work Week Number

= Year of Production

= Date Code

Thermal Resistance,

Junction−to−Ambient

357

556

°C/W

3. Device mounted on FR−4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for

the collector lead minimum 6 cm .

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of

this data sheet.

Publication Order Number:

August, 2022 − Rev. 3

MMBFJ211/D

12 3 4 5 6 7...9

中文翻译

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