生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.95 |
风险等级: | 5.59 | Is Samacsys: | N |
配置: | SINGLE | FET 技术: | JUNCTION |
JEDEC-95代码: | TO-226AA | JESD-30 代码: | O-PBCY-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 135 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
J210L-E3 | VISHAY |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
J210LTA | TEMIC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
J210LTR | TEMIC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
J210LTR1 | VISHAY |
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RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-2 | |
J210TA | CALOGIC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
J210-TA | VISHAY |
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Transistor | |
J210-TA13 | VISHAY |
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Transistor | |
J210-TA13-E3 | VISHAY |
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Transistor | |
J210-TA-E3 | VISHAY |
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Transistor | |
J210TR1 | CALOGIC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- |