5秒后页面跳转
J210D75Z PDF预览

J210D75Z

更新时间: 2024-01-24 04:16:38
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
13页 596K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92

J210D75Z 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownHTS代码:8541.21.00.95
风险等级:5.6配置:SINGLE
FET 技术:JUNCTION最高频带:VERY HIGH FREQUENCY BAND
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

J210D75Z 数据手册

 浏览型号J210D75Z的Datasheet PDF文件第2页浏览型号J210D75Z的Datasheet PDF文件第3页浏览型号J210D75Z的Datasheet PDF文件第4页浏览型号J210D75Z的Datasheet PDF文件第5页浏览型号J210D75Z的Datasheet PDF文件第6页浏览型号J210D75Z的Datasheet PDF文件第7页 
MMBFJ210  
MMBFJ211  
MMBFJ212  
J210  
J211  
J212  
G
S
TO-92  
G
S
SOT-23  
Mark: 62V / 62W / 62X  
D
NOTE: Source & Drain  
are interchangeable  
D
N-Channel RF Amplifier  
This device is designed for HF/VHF mixer/amplifier and  
applications where Process 50 is not adequate. Sufficient  
gain and low noise for sensitive receivers. Sourced from  
Process 90.  
Absolute Maximum Ratings*  
TA= 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VDG  
Drain-Gate Voltage  
25  
- 25  
V
V
VGS  
Gate-Source Voltage  
IGF  
Forward Gate Current  
10  
mA  
5
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ ,Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA= 25°C unless otherwise noted  
Max  
Symbol  
Characteristic  
Units  
J210-212  
*MMBFJ210-212  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
350  
2.8  
125  
225  
1.8  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
357  
556  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  
J210/J211/J212/MMBFJ210/J211/J212, Rev A  

与J210D75Z相关器件

型号 品牌 描述 获取价格 数据表
J210J05Z FAIRCHILD RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C

获取价格

J210J05Z TI RF SMALL SIGNAL

获取价格

J210J18Z FAIRCHILD RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C

获取价格

J210J18Z TI RF SMALL SIGNAL

获取价格

J210L-1-18 VISHAY Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A

获取价格

J210L18 VISHAY Si, RF SMALL SIGNAL, FET, TO-226AA

获取价格