March 2007
FJP13009
High Voltage Fast-Switching NPN Power Transistor
•
•
•
High Voltage Capability
High Switching Speed
Suitable for Electronic Ballast and Switching Mode Power Supply
TO-220
1
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings*
T
= 25°C unless otherwise noted (notes_1)
C
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
700
V
V
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
400
9
12
V
Collector Current (DC)
Collector Current (Pulse)
Base Current
A
ICP
24
A
IB
6
A
PC
Collector Dissipation (TC = 25°C)
Junction Temperature
Storage Temperature Range
100
150
-65 ~ 150
W
°C
°C
TJ
TSTG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES_1:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Package Marking and Ordering Information
Device Item (notes_2)
FJP13009
Device Marking
J13009
Package
TO-220
Packing Method
Qty(pcs)
1,200
Bulk
TUBE
TUBE
FJP13009H2TU
FJP13009TU
Notes_2 :
J130092
TO-220
1,000
J13009
TO-220
1,000
1) The Affix “-H2” means the hFE classification.
2) The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging.
©2007 Fairchild Semiconductor Corporation
FJP13009 Rev. B
1
www.fairchildsemi.com