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J110A-TO-92 PDF预览

J110A-TO-92

更新时间: 2024-09-29 10:56:55
品牌 Logo 应用领域
凌特 - Linear /
页数 文件大小 规格书
2页 300K
描述
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92, TO-92, 3 PIN

J110A-TO-92 数据手册

 浏览型号J110A-TO-92的Datasheet PDF文件第2页 
J/SST108 SERIES  
LOW NOISE SINGLE  
N-CHANNEL JFET SWITCH  
Linear Integrated Systems  
FEATURES  
Direct Replacement for Siliconix J/SST: 108, 109, 110, & 110A  
LOW ON RESISTANCE  
FAST SWITCHING  
rDS(on) 8Ω  
tON 4ns  
J SERIES  
TO-92  
BOTTOM VIEW  
SST SERIES  
SOT-23  
TOP VIEW  
ABSOLUTE MAXIMUM RATINGS1  
@ 25 °C (unless otherwise stated)  
Maximum Temperatures  
Storage Temperature  
1
D
3
D
1
S
2
G
3
G
-55 to 150°C  
-55 to 150°C  
2
S
Junction Operating Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation  
Maximum Currents  
Gate Current  
Maximum Voltages  
350mW  
50mA  
-25V  
Gate to Drain or Source  
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)  
J/SST108  
J/SST109  
J/SST110  
SYM.  
CHARACTERISTIC  
TYP  
UNIT CONDITIONS  
IG = -1µA, VDS = 0V  
MIN MAX MIN MAX MIN MAX  
BVGSS Gate to Source Breakdown Voltage  
VGS(off) Gate to Source Cutoff Voltage  
VGS(F)  
IDSS  
IGSS  
IG  
-25  
-3  
-25  
-2  
-25  
V
-10  
-3  
-6  
-3  
-0.5  
-4  
-3  
VDS = 5V, ID = 1µA  
Gate to Source Forward Voltage  
Drain to Source Saturation Current2  
Gate Leakage Current  
Gate Operating Current  
Drain Cutoff Current  
0.7  
IG = 1mA, VDS = 0V  
VDS = 15V, VGS = 0V  
VGS = -15V, VDS = 0V  
VDG = 10V, ID = 10mA  
VDS = 5V, VGS = -10V  
80  
40  
10  
mA  
nA  
-0.01  
-0.01  
0.02  
ID(off)  
3
8
3
12  
3
18  
25  
108, 109, 110  
110A  
Drain to Source  
On Resistance  
rDS(on)  
VGS = 0V, VDS 0.1V  
DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)  
J/SST108  
J/SST109  
J/SST110  
SYM.  
CHARACTERISTIC  
TYP  
UNIT CONDITIONS  
MIN MAX MIN MAX MIN MAX  
gfs  
gos  
Forward Transconductance  
Output Conductance  
17  
0.6  
V
DS = 5V, ID = 10mA  
mS  
f = 1kHz  
VGS = 0V, ID = 0A  
rds(on)  
Drain to Source On Resistance  
8
12  
18  
f = 1kHz  
SST  
60  
60  
11  
11  
VDS = 0V, VGS = 0V  
Ciss  
Input Capacitance  
f = 1MHz  
J
SST  
J
85  
15  
85  
15  
85  
15  
pF  
Reverse Transfer  
Capacitance  
VDS = 0V, VGS = -10V  
Crss  
en  
f = 1MHz  
VDS = 5V, ID = 10mA  
nV/Hz  
Equivalent Input Noise Voltage  
3.5  
f = 1kHz  
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261  

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