5秒后页面跳转
IXYX120N120B3 PDF预览

IXYX120N120B3

更新时间: 2024-11-21 14:56:43
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
3页 192K
描述
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT?)设计平台生产,具有高电流处理能力、高速开关功能、较低的总能量损失和较短的电流下降时间。 它们具有正集电

IXYX120N120B3 数据手册

 浏览型号IXYX120N120B3的Datasheet PDF文件第2页浏览型号IXYX120N120B3的Datasheet PDF文件第3页 
Advance Technical Information  
1200V XPTTM IGBT  
GenX3TM  
VCES = 1200V  
IC110 = 120A  
VCE(sat)  2.2V  
tfi(typ) = 260ns  
IXYK120N120B3  
IXYX120N120B3  
High-Speed IGBT  
for 10-30 kHz Switching  
TO-264P (IXYK)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
1200  
1200  
V
V
G
TJ = 25°C to 175°C, RGE = 1M  
Tab  
C
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E
PLUS247 (IXYX)  
IC25  
TC = 25°C (Chip Capability)  
320  
A
ILRMS  
IC110  
Terminal Current Limit  
TC = 110°C  
160  
120  
A
A
ICM  
TC = 25°C, 1ms  
800  
A
G
IA  
EAS  
TC = 25°C  
TC = 25°C  
60  
2
A
J
C
Tab  
E
SSOA  
VGE = 15V, TVJ = 150°C, RG = 1  
Clamped Inductive Load  
ICM = 240  
A
G = Gate  
C = Collector  
E
= Emitter  
(RBSOA)  
VCE VCES  
Tab = Collector  
PC  
TC = 25°C  
1500  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
Square RBSOA  
-55 ... +175  
International Standard Packages  
Positive Thermal Coefficient of  
Vce(sat)  
Avalanche Rated  
High Current Handling Capability  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in  
N/lb  
20..120 /4.5..27  
Weight  
TO-264P  
PLUS247  
10  
6
g
g
Advantages  
High Power Density  
Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1200  
3.0  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 1mA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
High Frequency Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
5.0  
25 A  
1.5 mA  
TJ = 150C  
IGES  
VCE = 0V, VGE = 20V  
200 nA  
VCE(sat)  
IC = 100A, VGE = 15V, Note 1  
TJ = 150C  
1.8  
2.4  
2.2  
V
V
Lamp Ballasts  
© 2015 IXYS CORPORATION, All Rights Reserved  
DS100646(02/15)  

与IXYX120N120B3相关器件

型号 品牌 获取价格 描述 数据表
IXYX120N120C3 IXYS

获取价格

Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel,
IXYX120N120C3 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYX140N120A4 LITTELFUSE

获取价格

通过利用XPT?薄晶圆技术和第4代 (GenX4?) Trench IGBT流程,这些高达
IXYX140N90C3 IXYS

获取价格

XPTTM 900V IGBTs
IXYX140N90C3 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYX200N65B3 IXYS

获取价格

Advance Technical Information
IXYX200N65B3 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYX25N250CV1 IXYS

获取价格

High Voltage XPT IGBT w/ Diode
IXYX25N250CV1HV IXYS

获取价格

High Voltage XPT IGBT w/ Diode
IXYX300N65A3 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT