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IXYX100N120C3 PDF预览

IXYX100N120C3

更新时间: 2024-11-21 14:56:15
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
7页 228K
描述
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT?)设计平台生产,具有高电流处理能力、高速开关功能、较低的总能量损失和较短的电流下降时间。 它们具有正集电

IXYX100N120C3 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.22
Base Number Matches:1

IXYX100N120C3 数据手册

 浏览型号IXYX100N120C3的Datasheet PDF文件第2页浏览型号IXYX100N120C3的Datasheet PDF文件第3页浏览型号IXYX100N120C3的Datasheet PDF文件第4页浏览型号IXYX100N120C3的Datasheet PDF文件第5页浏览型号IXYX100N120C3的Datasheet PDF文件第6页浏览型号IXYX100N120C3的Datasheet PDF文件第7页 
Preliminary Technical Information  
1200V XPTTM IGBTs  
GenX3TM  
VCES = 1200V  
IC110 = 100A  
VCE(sat) 3.5V  
tfi(typ) = 110ns  
IXYK100N120C3  
IXYX100N120C3  
High-Speed IGBT  
for 20-50 kHz Switching  
TO-264 (IXYK)  
Symbol  
Test Conditions  
Maximum Ratings  
G
C
E
VCES  
VCGR  
TJ = 25°C to 175°C  
1200  
1200  
V
V
Tab  
TJ = 25°C to 175°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
PLUS247 (IXYX)  
IC25  
TC = 25°C (Chip Capability)  
188  
A
ILRMS  
IC110  
ICM  
Terminal Current Limit  
TC = 110°C  
160  
100  
A
A
G
TC = 25°C, 1ms  
490  
A
C
Tab  
E
IA  
EAS  
TC = 25°C  
TC = 25°C  
50  
A
J
1.2  
G = Gate  
E
= Emitter  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 1Ω  
ICM = 200  
A
C = Collector  
Tab = Collector  
(RBSOA)  
Clamped Inductive Load  
@VCE VCES  
PC  
TC = 25°C  
1150  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
z
Optimized for Low Switching Losses  
Square RBSOA  
Positive Thermal Coefficient of  
Vce(sat)  
z
z
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
z
z
z
Avalanche Rated  
High Current Handling Capability  
International Standard Packages  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z
High Power Density  
Low Gate Drive Requirement  
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Applications  
5.0  
z
High Frequency Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
25 μA  
z
TJ = 150°C  
TJ = 150°C  
1.25 mA  
z
z
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
z
z
VCE(sat)  
IC = IC110, VGE = 15V, Note 1  
2.9  
4.1  
3.5  
V
V
z
z
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100404A(03/13)  

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