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T0400NA18A PDF预览

T0400NA18A

更新时间: 2024-01-31 22:11:32
品牌 Logo 应用领域
IXYS 晶体管
页数 文件大小 规格书
14页 210K
描述
Insulated Gate Bipolar Transistor, 400A I(C), 1800V V(BR)CES, N-Channel

T0400NA18A 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CXDB-X4
Reach Compliance Code:unknown风险等级:5.84
最大集电极电流 (IC):400 A集电极-发射极最大电压:1800 V
配置:SINGLE WITH BUILT-IN DIODE最大降落时间(tf):1000 ns
门极发射器阈值电压最大值:7 V门极-发射极最大电压:20 V
JESD-30 代码:O-CXDB-X4元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1800 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:YES
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
晶体管元件材料:SILICON标称断开时间 (toff):1380 ns
标称接通时间 (ton):1180 nsBase Number Matches:1

T0400NA18A 数据手册

 浏览型号T0400NA18A的Datasheet PDF文件第2页浏览型号T0400NA18A的Datasheet PDF文件第3页浏览型号T0400NA18A的Datasheet PDF文件第4页浏览型号T0400NA18A的Datasheet PDF文件第5页浏览型号T0400NA18A的Datasheet PDF文件第6页浏览型号T0400NA18A的Datasheet PDF文件第7页 
Date:- 10 May, 2001  
Data Sheet Issue:- 1  
WESTCODE  
Insulated Gate Bi-polar Transistor  
Type T0400NA18A  
(capsule type)  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
1800  
VOLTAGE RATINGS  
UNITS  
VCES  
VGES  
Collector - emitter voltage (Note 1)  
Peak gate - emitter voltage (Note 1)  
V
V
±20  
MAXIMUM  
LIMITS  
400  
RATINGS  
UNITS  
IC  
DC - Collector current, IGBT (Note 2)  
Repetitive peak collector current, tp=1ms, IGBT (Note 2)  
DC - Forward current, Diode  
A
A
ICRM  
IF  
800  
400  
A
IFRM  
PMAX  
Tj  
Repetitive peak forward current, tp=1ms, Diode  
Maximum power dissipation, IGBT  
800  
A
1.8  
kW  
°C  
°C  
Operating temperature range (Note 3)  
Storage temperature range (Note 3)  
-60 to +150  
-60 to +150  
Tstg  
Notes:-  
1) Unless otherwise indicated Tj = 125°C  
2) Tc = 90°C  
3) For operation below -40°C or above 125°C please contact factory  
Introduction  
This rating report represents the outline specification for an Insulated gate bi-polar transistor (IGBT)  
housed in a 47mm boss diameter hermetic cold weld capsule.  
The described Insulated gate bi-polar transistor (IGBT) type T0400NA18A are manufactured using NPT  
technology and include an integral antiparallel diode.  
Data Sheet T0400NA18A. Issue 1  
Page 1 of 14  
May, 2001  

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