Datasheet > IXXP12N65B4D1

IXXP12N65B4D1

更新时间： 2023-12-06 20:13:16

品牌	Logo	应用领域
力特 - LITTELFUSE		双极性晶体管
页数	文件大小	规格书
8页	256K
描述
这些器件采用我们专有的XPT?薄晶圆技术和最先进的Trench IGBT工艺开发，具有低热阻、低能量损耗、快速切换、低尾电流和高电流密度等特点。此外，它们在短路条件下表现出绝佳的强度——10μs

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IXXP12N65B4D1 数据手册

XPT^TM650V IGBT

GenX4^TMw/Diode

V_CES= 650V

I_C110= 12A

V_CE(sat) 1.95V

t_fi(typ)= 57ns

IXXP12N65B4D1

Extreme Light Punch Through

IGBT for 5-30kHz Switching

TO-220

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 175°C

650

Tab

T_J= 25°C to 175°C, R_GE= 1M

V_GES

V_GEM

Continuous

Transient

±20

±30

G = Gate

E = Emitter

= Collector

Tab = Collector

I_C25

I_C110

I_F110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1ms

Features

SSOA

V_GE= 15V, T_VJ= 150°C, R_G= 20

Clamped Inductive Load

I_CM= 24

μs



Optimized for 5-30kHz Switching

Square RBSOA

Anti-Parallel Fast Diode

Short Circuit Capability

International Standard Package

(RBSOA)

@V_CE V_CES



t_sc

V_GE= 15V, V_CE= 360V, T_J= 150°C

(SCSOA)

R_G= 82, Non Repetitive

P_C

T_C= 25°C

160

T_J

T_JM

T_stg

-55 ... +175

175

°C

Advantages

-55 ... +175



High Power Density

Extremely Rugged



T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C



Low Gate Drive Requirement

M_d

Mounting Torque

1.13/10

Nm/lb.in.

Applications

Weight



Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts



Symbol

Test Conditions

Characteristic Values



(T_J= 25C, Unless Otherwise Specified)

Min.

650

4.0

Typ.

Max.



BV_CES

V_GE(th)

I_CES

I_C= 250A, V_GE= 0V

I_C= 250A, V_CE= V_GE

V_CE= V_CES, V_GE= 0V



6.5



High Frequency Power Inverters

10 A

T_J= 150C

350 A

I_GES

V_CE= 0V, V_GE= 20V

100 nA

V_CE(sat)

I_C= 12A, V_GE= 15V, Note 1

1.74

2.00

1.95

DS100797A(8/19)

12 3 4 5 6 7 8

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