5秒后页面跳转
IXXN200N65A4 PDF预览

IXXN200N65A4

更新时间: 2024-11-19 14:56:39
品牌 Logo 应用领域
力特 - LITTELFUSE 双极性晶体管
页数 文件大小 规格书
7页 235K
描述
这些器件采用我们专有的XPT?薄晶圆技术和最先进的第4代(GenX4?)Trench IGBT工艺研发,具有低热阻、低能量损耗、快速切换、低尾电流和高电流密度等特点。 此外,它们在短路条件下表现出

IXXN200N65A4 数据手册

 浏览型号IXXN200N65A4的Datasheet PDF文件第2页浏览型号IXXN200N65A4的Datasheet PDF文件第3页浏览型号IXXN200N65A4的Datasheet PDF文件第4页浏览型号IXXN200N65A4的Datasheet PDF文件第5页浏览型号IXXN200N65A4的Datasheet PDF文件第6页浏览型号IXXN200N65A4的Datasheet PDF文件第7页 
Preliminary Technical Information  
XPTTM 650V IGBT  
GenX4TM  
IXXN200N65A4  
VCES = 650V  
IC110 = 200A  
VCE(sat)  1.80V  
tfi(typ) = 123ns  
Extreme Light Punch Through  
IGBT for 5-20kHz Switching  
SOT-227B, miniBLOC  
E153432  
E  
G
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
TJ = 25°C to 175°C, RGE = 1M  
E   
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
C
IC25  
ILRMS  
IC110  
TC = 25°C (Chip Capability)  
Leads Current Limit  
TC = 110°C  
410  
200  
200  
A
A
A
G = Gate, C = Collector, E = Emitter  
either emitter terminal can be used as  
Main or Kelvin Emitter  
ICM  
TC = 25°C, 1ms  
1200  
A
SSOA  
VGE = 15V, TVJ = 150°C, RG = 2  
ICM = 400  
A
(RBSOA)  
Clamped Inductive Load  
@VCE VCES  
Features  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
10  
μs  
Optimized for Low Conduction and  
Switching Losses  
miniBLOC, with Aluminium Nitride  
(SCSOA)  
RG = 2, Non Repetitive  
PC  
TC = 25°C  
1250  
W
Isolation  
International Standard Package  
Isolation Voltage 2500V~  
Optimized for 5-20kHz Switching  
Square RBSOA  
Short Circuit Capability  
High Current Handling Capability  
Easy to Parallel  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
-55 ... +175  
VISOL  
50/60Hz  
IISOL 1mA  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Weight  
30  
g
Advantages  
High Power Density  
Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
5.0  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 4mA, VGE = 0V  
IC = 3mA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
6.5  
10 A  
500 A  
TJ = 150C  
IGES  
VCE = 0V, VGE = 20V  
200 nA  
Welding Machines  
VCE(sat)  
IC = 150A, VGE = 15V, Note 1  
TJ = 150C  
1.44  
1.15  
1.80  
V
V
©2019 IXYS CORPORATION, All Rights Reserved  
DS100742B(4/19)  

与IXXN200N65A4相关器件

型号 品牌 获取价格 描述 数据表
IXXN340N65B4 LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor,
IXXP12N65B4 LITTELFUSE

获取价格

这些器件采用我们专有的XPT?薄晶圆技术和最先进的Trench IGBT工艺开发,具有低热
IXXP12N65B4D1 LITTELFUSE

获取价格

这些器件采用我们专有的XPT?薄晶圆技术和最先进的Trench IGBT工艺开发,具有低热
IXXP50N60B3 LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor,
IXXP50N60B3 IXYS

获取价格

Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB
IXXQ30N60B3M LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXXR100N60B3H1 IXYS

获取价格

Insulated Gate Bipolar Transistor, 145A I(C), 600V V(BR)CES, N-Channel, PLASTIC, ISOPLUS24
IXXR100N60B3H1 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXXR110N65B4H1 LITTELFUSE

获取价格

这些器件采用我们专有的XPT?薄晶圆技术和最先进的Trench IGBT工艺开发,具有低热
IXXX100N60B3H1 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT