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IXXN200N60B3H1 PDF预览

IXXN200N60B3H1

更新时间: 2024-11-19 14:56:43
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
8页 215K
描述
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT?)设计平台生产,具有高电流处理能力、高速开关功能、较低的总能量损失和较短的电流下降时间。 它们具有正集电

IXXN200N60B3H1 数据手册

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Preliminary Technical Information  
XPTTM 600V IGBT  
GenX3TM w/Diode  
IXXN200N60B3H1  
VCES = 600V  
IC110 = 98A  
VCE(sat) 1.7V  
tfi(typ) = 110ns  
Extreme Light Punch Through  
IGBT for 10-30kHz Switching  
SOT-227B, miniBLOC  
E153432  
Symbol  
Test Conditions  
Maximum Ratings  
E c  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
G
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E c  
IC25  
IC110  
IF110  
TC = 25°C (Chip Capability)  
TC = 110°C  
TC = 110°C  
200  
98  
30  
A
A
A
C
G = Gate, C = Collector, E = Emitter  
ICM  
TC = 25°C, 1ms  
1000  
A
c
either emitter terminal can be used as  
Main or Kelvin Emitter  
IA  
EAS  
TC = 25°C  
TC = 25°C  
100  
1
A
J
Features  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 1Ω  
Clamped Inductive Load  
ICM = 400  
A
μs  
W
(RBSOA)  
@VCE VCES  
z
Silicon Chip on Direct-Copper Bond  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
10  
(DCB) Substrate  
miniBLOC, with Aluminium Nitride  
z
(SCSOA)  
RG = 10Ω, Non Repetitive  
Isolation  
PC  
TC = 25°C  
780  
z
Optimized for Low Conduction and  
Switching Losses  
Isolated Mounting Surface  
Anti-Parallel Ultra Fast Diode  
2500V~ Electrical Isolation  
Optimized for 10-30kHz Switching  
Avalanche Rated  
Short Circuit Capability  
Very High Current Capability  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
z
z
-55 ... +150  
z
z
VISOL  
50/60Hz  
IISOL 1mA  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
z
z
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
z
z
Square RBSOA  
Weight  
30  
g
Advantages  
z
High Power Density  
Low Gate Drive Requirement  
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
600  
3.5  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
z
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
z
6.0  
z
50 μA  
mA  
±200 nA  
z
Note 2, TJ = 150°C  
3
z
z
IGES  
VCE = 0V, VGE = ±20V  
z
z
VCE(sat)  
IC = 100A, VGE = 15V, Note 1  
1.40  
1.58  
1.70  
V
V
Lamp Ballasts  
TJ = 150°C  
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100471A(02/13)  

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