5秒后页面跳转
IXXN110N65B4H1 PDF预览

IXXN110N65B4H1

更新时间: 2024-11-06 14:56:19
品牌 Logo 应用领域
力特 - LITTELFUSE 双极性晶体管
页数 文件大小 规格书
8页 241K
描述
这些器件采用我们专有的XPT?薄晶圆技术和最先进的Trench IGBT工艺开发,具有低热阻、低能量损耗、快速切换、低尾电流和高电流密度等特点。 此外,它们在短路条件下表现出绝佳的强度——10μs

IXXN110N65B4H1 数据手册

 浏览型号IXXN110N65B4H1的Datasheet PDF文件第2页浏览型号IXXN110N65B4H1的Datasheet PDF文件第3页浏览型号IXXN110N65B4H1的Datasheet PDF文件第4页浏览型号IXXN110N65B4H1的Datasheet PDF文件第5页浏览型号IXXN110N65B4H1的Datasheet PDF文件第6页浏览型号IXXN110N65B4H1的Datasheet PDF文件第7页 
XPTTM 650V GenX4TM IXXN110N65B4H1  
w/ Sonic Diode  
VCES = 650V  
IC110 = 110A  
VCE(sat)  2.10V  
tfi(typ) = 43ns  
Extreme Light Punch Through  
IGBT for 10-30kHz Switching  
E
SOT-227B, miniBLOC  
E153432  
Symbol  
Test Conditions  
Maximum Ratings  
E  
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
G
TJ = 25°C to 175°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E   
IC25  
IC25  
IC110  
IF110  
ICM  
TC = 25°C (Chip Capability)  
Terminal Current Limit  
TC = 110°C  
230  
200  
110  
70  
A
A
A
A
C
G = Gate, C = Collector, E = Emitter  
TC = 110°C  
either emitter terminal can be used as  
Main or Kelvin Emitter  
TC = 25°C, 1ms  
650  
A
SSOA  
VGE = 15V, TVJ = 150°C, RG = 2  
Clamped Inductive Load  
ICM = 220  
A
Features  
(RBSOA)  
@VCE VCES  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
10  
μs  
International Standard Package  
miniBLOC, with Aluminium Nitride  
(SCSOA)  
RG = 82, Non Repetitive  
Isolation  
2500V~ Isolation Voltage  
Anti-Parallel Sonic Diode  
Optimized for 10-30kHz Switching  
Square RBSOA  
Short Circuit Capability  
High Current Handling Capability  
PC  
TC = 25°C  
750  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
-55 ... +175  
VISOL  
50/60Hz  
IISOL 1mA  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Advantages  
Weight  
30  
g
High Power Density  
Low Gate Drive Requirement  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
4.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.5  
50 A  
3 mA  
TJ = 150C  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
VCE(sat)  
IC = 110A, VGE = 15V, Note 1  
TJ = 150C  
1.72  
2.05  
2.10  
V
V
©2019 IXYS CORPORATION, All Rights Reserved  
DS100505D(4/19)  

与IXXN110N65B4H1相关器件

型号 品牌 获取价格 描述 数据表
IXXN110N65C4H1 LITTELFUSE

获取价格

这些器件采用我们专有的XPT?薄晶圆技术和最先进的Trench IGBT工艺开发,具有低热
IXXN200N60B3 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXXN200N60B3H1 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXXN200N60C3H1 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXXN200N65A4 LITTELFUSE

获取价格

这些器件采用我们专有的XPT?薄晶圆技术和最先进的第4代(GenX4?)Trench IG
IXXN340N65B4 LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor,
IXXP12N65B4 LITTELFUSE

获取价格

这些器件采用我们专有的XPT?薄晶圆技术和最先进的Trench IGBT工艺开发,具有低热
IXXP12N65B4D1 LITTELFUSE

获取价格

这些器件采用我们专有的XPT?薄晶圆技术和最先进的Trench IGBT工艺开发,具有低热
IXXP50N60B3 LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor,
IXXP50N60B3 IXYS

获取价格

Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB