是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | TO-247AD | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.61 | 最大集电极电流 (IC): | 100 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE |
门极发射器阈值电压最大值: | 5.5 V | 门极-发射极最大电压: | 20 V |
JEDEC-95代码: | TO-247AD | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 600 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 170 ns |
标称接通时间 (ton): | 69 ns | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IXSH30N60C | IXYS |
类似代替 |
High Speed IGBT |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXXH50N60C3D1 | IXYS |
获取价格 |
Extreme Light Punch Through IGBT for 20-60 kHz Switching | |
IXXH50N60C3D1 | LITTELFUSE |
获取价格 |
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
IXXH60N65B4 | LITTELFUSE |
获取价格 |
这些器件采用我们专有的XPT?薄晶圆技术和最先进的Trench IGBT工艺开发,具有低热 | |
IXXH60N65B4H1 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 116A I(C), 650V V(BR)CES, N-Channel, | |
IXXH60N65B4H1 | LITTELFUSE |
获取价格 |
这些器件采用我们专有的XPT?薄晶圆技术和最先进的Trench IGBT工艺开发,具有低热 | |
IXXH60N65C4 | LITTELFUSE |
获取价格 |
这些器件采用我们专有的XPT?薄晶圆技术和最先进的Trench IGBT工艺开发,具有低热 | |
IXXH75N60B3 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, | |
IXXH75N60B3 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 160A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD | |
IXXH75N60B3D1 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, | |
IXXH75N60B3D1 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 160A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD |