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IXTT440N04T4HV PDF预览

IXTT440N04T4HV

更新时间: 2024-11-05 21:13:35
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
7页 240K
描述
Power Field-Effect Transistor,

IXTT440N04T4HV 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.74
Base Number Matches:1

IXTT440N04T4HV 数据手册

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Advance Technical Information  
TrenchT4TM  
Power MOSFET  
VDSS = 40V  
ID25 = 440A  
RDS(on) 1.25m  
IXTT440N04T4HV  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-268HV  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25C to 175C  
40  
40  
V
V
S
VDGR  
TJ = 25C to 175C, RGS = 1M  
D (Tab)  
VGSM  
Transient  
15  
V
G = Gate  
S = Source  
D
= Drain  
ID25  
ILRMS  
TC = 25C  
Lead Current Limit, RMS  
440  
160  
A
A
Tab = Drain  
IDM  
TC = 25C, Pulse Width Limited by TJM  
1200  
A
IA  
TC = 25C  
TC = 25C  
440  
1.5  
A
J
EAS  
PD  
TC = 25C  
940  
W
Features  
TJ  
-55 ... +175  
175  
C  
C  
C  
TJM  
Tstg  
International Standard Package  
Low RDS(ON) and QG  
-55 ... +175  
Avalanche Rated  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Low Package Inductance  
Weight  
4
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
40  
V
V
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
2.0  
4.0  
200 nA  
IDSS  
10 A  
1 mA  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 100A, Note 1  
1.25 m  
DS100719(4/16)  
© 2016 IXYS CORPORATION, All Rights Reserved  

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