品牌 | Logo | 应用领域 |
力特 - LITTELFUSE | / | |
页数 | 文件大小 | 规格书 |
7页 | 240K | |
描述 | ||
Power Field-Effect Transistor, |
生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.74 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTT440N055T2 | IXYS |
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N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode | |
IXTT440N055T2 | LITTELFUSE |
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这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能 | |
IXTT44N25L2HV | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, | |
IXTT48P20P | IXYS |
获取价格 |
Power Field-Effect Transistor, 48A I(D), 200V, 0.085ohm, 1-Element, P-Channel, Silicon, Me | |
IXTT48P20P | LITTELFUSE |
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Polar? P通道MOSFET采用我们的Polar技术平台制造,相比传统产品将通态电阻( | |
IXTT4N150HV | LITTELFUSE |
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高压系列N通道标准MOSFET适用于多种多样的电源开关系统,包括高压电源、电容放电电路、脉 | |
IXTT500N04T2 | IXYS |
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Power Field-Effect Transistor, 500A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, M | |
IXTT500N04T2 | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, | |
IXTT50N30 | IXYS |
获取价格 |
Advance Technical Information High Current Power MOSFET | |
IXTT50P085 | IXYS |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 85V, 0.055ohm, 1-Element, P-Channel, Silicon, Met |