Datasheet > IXTR32P60P

IXTR32P60P

更新时间： 2024-12-01 14:56:51

品牌	Logo	应用领域
力特 - LITTELFUSE		开关栅栅极
页数	文件大小	规格书
6页	154K
描述
Polar? P通道MOSFET采用我们的Polar技术平台制造，相比传统产品将通态电阻(RDSon)显著降低30%，并将栅极电荷(Qg)降低40%，从而降低了传导损失，并能提供出色的开关性能。

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中文翻译

获取价格

数据手册

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IXTR32P60P 数据手册

PolarP^TM

Power MOSFET

V_DSS= - 600V

I_D25= - 18A

IXTR32P60P

R_DS(on)

≤

385mΩ

P-Channel Enhancement Mode

Avalanche Rated

ISOPLUS247

E153432

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

- 600

V_DGR

Isolated Tab

V_GSS

V_GSM

Continuous

Transient

±20

±30

G = Gate

= Drain

S = Source

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

-18

- 96

I_A

T_C= 25°C

- 32

3.5

E_AS

Features

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

^zSilicon Chip on Direct-Copper Bond

(DCB) Substrate

- UL Recognized Package

- Isolated Mounting Surface

- 2500V~ Electrical Isolation

^zAvalanche Rated

^zThe Rugged PolarP^TMProcess

^zLow Q_G

^zLow Drain-to-Tab Capacitance

^zLow Package Inductance

310

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

V_ISOL

50/60 Hz, 1 Minute

Mounting Force

2500

M_d

20..120/4.5..27

N/lb.

Weight

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

- 600

- 2.0

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= - 250μA

V_DS= V_GS, I_D= -1mA

V_GS= ±20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

High-Side Switches

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

- 4.0

±100 nA

I_DSS

- 50 μA

- 250 μA

Current Regulators

T_J= 125°C

R_DS(on)

V_GS= -10V, I_D= -16A, Note 1

385 mΩ

DS99992B(12/12)

12 3 4 5 6

中文翻译

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