型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTR210P10T | LITTELFUSE |
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Trench P通道MOSFET非常适合“高压侧”开关应用,这些应用可采用简单的接地参考驱 | |
IXTR32P60P | IXYS |
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Power Field-Effect Transistor, 18A I(D), 600V, 0.385ohm, 1-Element, P-Channel, Silicon, Me | |
IXTR32P60P | LITTELFUSE |
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Polar? P通道MOSFET采用我们的Polar技术平台制造,相比传统产品将通态电阻( | |
IXTR36P15P | IXYS |
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Power Field-Effect Transistor, 22A I(D), 150V, 0.12ohm, 1-Element, P-Channel, Silicon, Met | |
IXTR36P15P | LITTELFUSE |
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Power Field-Effect Transistor, | |
IXTR40P50P | IXYS |
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Power Field-Effect Transistor, 22A I(D), 500V, 0.26ohm, 1-Element, P-Channel, Silicon, Met | |
IXTR40P50P | LITTELFUSE |
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Polar? P通道MOSFET采用我们的Polar技术平台制造,相比传统产品将通态电阻( | |
IXTR48P20P | IXYS |
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P-Channel Enhancement Mode Avalanche Rated | |
IXTR48P20P | LITTELFUSE |
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Polar? P通道MOSFET采用我们的Polar技术平台制造,相比传统产品将通态电阻( | |
IXTR62N15P | IXYS |
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Power Field-Effect Transistor, 36A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Me |