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IXTQ470P2 PDF预览

IXTQ470P2

更新时间: 2024-11-06 14:56:51
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网开关脉冲晶体管
页数 文件大小 规格书
3页 118K
描述
Polar2?标准功率MOSFET经过专门定制,可为设计师提供在性能和成本之间取得最佳平衡的器件解决方案。 这些器件包含了Polar技术平台,以实现低导通电阻(Rdson)。 Polar2标准MO

IXTQ470P2 数据手册

 浏览型号IXTQ470P2的Datasheet PDF文件第2页浏览型号IXTQ470P2的Datasheet PDF文件第3页 
Advance Technical Information  
PolarP2TM  
Power MOSFET  
VDSS = 500V  
ID25 = 42A  
RDS(on) 145mΩ  
trr(typ) = 400ns  
IXTQ470P2  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-3P  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
500  
500  
V
V
TJ = 25°C to 150°C, RGS = 1MΩ  
G
D
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
S
Tab  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
42  
126  
A
A
G = Gate  
S = Source Tab = Drain  
D
= Drain  
IA  
EAS  
TC = 25°C  
TC = 25°C  
42  
1.3  
A
J
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
10  
V/ns  
W
830  
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z Avalanche Rated  
z Fast Intrinsic Diode  
z Dynamic dv/dt Rated  
z Low Package Inductance  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque  
1.13/10  
5.5  
Nm/lb.in.  
g
Advantages  
Weight  
z High Power Density  
z Easy to Mount  
z Space Savings  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z Switch-Mode and Resonant-Mode  
Power Supplies  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
500  
2.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 30V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
z DC-DC Converters  
z Laser Drivers  
z AC and DC Motor Drives  
z Robotics and Servo Controls  
4.5  
± 100 nA  
μA  
IDSS  
5
TJ = 125°C  
50 μA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
145 mΩ  
DS100248(03/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  

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