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IXTQ22N60P PDF预览

IXTQ22N60P

更新时间: 2024-11-06 14:56:31
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 381K
描述
Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡的器件解决方案。 这些器件包含了Polar技术平台,以实现低导通电阻(Rdson)。 Polar标准MOS

IXTQ22N60P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.76其他特性:AVALANCHE RATED
雪崩能效等级(Eas):1000 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (ID):22 A最大漏源导通电阻:0.35 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):66 A认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTQ22N60P 数据手册

 浏览型号IXTQ22N60P的Datasheet PDF文件第2页浏览型号IXTQ22N60P的Datasheet PDF文件第3页浏览型号IXTQ22N60P的Datasheet PDF文件第4页浏览型号IXTQ22N60P的Datasheet PDF文件第5页浏览型号IXTQ22N60P的Datasheet PDF文件第6页 
PolarHVTM  
Power MOSFET  
IXTQ 22N60P  
IXTV 22N60P  
IXTV 22N60PS  
VDSS  
ID25  
RDS  
= 600  
= 22  
350 mΩ  
V
A
(on)  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-3P (IXTQ)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25° C to 150° C  
600  
600  
V
V
TJ = 25° C to 150° C; RGS = 1 MΩ  
VGS  
Continuous  
Tranisent  
30  
40  
V
V
G
D
S
(TAB)  
VGSM  
ID25  
IDM  
TC =25° C  
22  
66  
A
A
TC = 25° C, pulse width limited by TJM  
PLUS220 (IXTV)  
IAR  
TC =25° C  
22  
A
EAR  
EAS  
TC =25° C  
TC =25° C  
40  
mJ  
J
1.0  
G
D
S
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 4 Ω  
,
10  
V/ns  
D (TAB)  
TC =25° C  
400  
W
PLUS220SMD (IXTV_S)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
G
S
Md  
FC  
Mounting torque  
Mounting force  
(TO-3P)  
(PLUS 220)  
1.13/10 Nm/lb.in.  
D (TAB)  
11...65/2.5...15  
N/lb  
Weight  
TO-3P  
6
5.0  
g
g
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
PLUS220 & PLUS220SMD  
Features  
Symbol  
Test Conditions  
Characteristic Values  
l
l
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 30 VDC, VDS = 0  
600  
V
V
l
Low package inductance  
- easy to drive and to protect  
3.0  
5.5  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
Advantages  
TJ = 125°C  
l
Easy to mount  
Space savings  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t 300 µs, duty cycle d 2 %  
350 mΩ  
l
l
High power density  
DS99250E(12/05)  
© 2005 IXYS All rights reserved  

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