PolarHVTM
Power MOSFET
IXTQ 22N60P
IXTV 22N60P
IXTV 22N60PS
VDSS
ID25
RDS
= 600
= 22
≤ 350 mΩ
V
A
(on)
N-Channel Enhancement Mode
Avalanche Rated
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 150° C
600
600
V
V
TJ = 25° C to 150° C; RGS = 1 MΩ
VGS
Continuous
Tranisent
30
40
V
V
G
D
S
(TAB)
VGSM
ID25
IDM
TC =25° C
22
66
A
A
TC = 25° C, pulse width limited by TJM
PLUS220 (IXTV)
IAR
TC =25° C
22
A
EAR
EAS
TC =25° C
TC =25° C
40
mJ
J
1.0
G
D
S
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤150° C, RG = 4 Ω
,
10
V/ns
D (TAB)
TC =25° C
400
W
PLUS220SMD (IXTV_S)
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°C
°C
G
S
Md
FC
Mounting torque
Mounting force
(TO-3P)
(PLUS 220)
1.13/10 Nm/lb.in.
D (TAB)
11...65/2.5...15
N/lb
Weight
TO-3P
6
5.0
g
g
G = Gate
S = Source
D = Drain
TAB = Drain
PLUS220 & PLUS220SMD
Features
Symbol
Test Conditions
Characteristic Values
l
l
(TJ = 25° C, unless otherwise specified)
Min. Typ.
Max.
International standard packages
Unclamped Inductive Switching (UIS)
rated
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250µA
VGS = 30 VDC, VDS = 0
600
V
V
l
Low package inductance
- easy to drive and to protect
3.0
5.5
100
nA
IDSS
VDS = VDSS
VGS = 0 V
25
250
µA
µA
Advantages
TJ = 125°C
l
Easy to mount
Space savings
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
350 mΩ
l
l
High power density
DS99250E(12/05)
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