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IXTP76N25T PDF预览

IXTP76N25T

更新时间: 2024-11-19 14:56:55
品牌 Logo 应用领域
力特 - LITTELFUSE
页数 文件大小 规格书
8页 312K
描述
沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(ON)极低,因此确保了非常低的功率耗损。 再结合广泛的工作结温范围(从-40 °C到175 °C),这些产品非常适合汽车应用以及其他处

IXTP76N25T 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TO-220, 3 PINReach Compliance Code:compliant
风险等级:5.74Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (Abs) (ID):76 A
最大漏极电流 (ID):76 A最大漏源导通电阻:0.039 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):460 W
最大脉冲漏极电流 (IDM):170 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXTP76N25T 数据手册

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TrenchTM  
Power MOSFET  
VDSS = 250V  
ID25 = 76A  
RDS(on) 44m  
IXTA76N25T  
IXTP76N25T  
IXTQ76N25T  
IXTH76N25T  
N-Channel Enhancement Mode  
Typical Avalanched BV = 300V  
TO-263 AA (IXTA)  
TO-220AB (IXTP)  
TO-3P (IXTQ)  
G
S
G
D
G
D
D (Tab)  
S
D (Tab)  
S
D (Tab)  
TO-247(IXTH)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
250  
250  
V
V
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
D (Tab)  
S
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
76  
170  
A
A
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
IA  
EAS  
TC = 25C  
TC = 25C  
8
1.5  
A
J
PD  
TC = 25C  
460  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
Features  
Avalanche Rated  
High Current Handling Capability  
Fast Intrinsic Rectifier  
Low RDS(on)  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
FC  
Mounting Force (TO-263)  
10..65 / 2.2..14.6  
N/lb  
Md  
Mounting Torque (TO-220, TO-3P & TO-247)  
1.13/10  
Nm/lb.in  
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
6.0  
g
g
g
g
Advantages  
Easy to Mount  
Space Savings  
TO-247  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS = 0V, ID = 1mA  
VGS = 0V, ID = 10mA  
250  
V
V
DC-DC Converters  
Battery Chargers  
300  
VGS(th)  
IGSS  
VDS = VGS, ID = 250μA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
3.0  
5.0  
V
Switch-Mode and Resonant-Mode  
Power Supplies  
 100 nA  
A  
DC Choppers  
AC Motor Drives  
Uninterruptible Power Supplies  
High Speed Power Switching  
Applications  
IDSS  
2
TJ = 125C  
200 μA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
44 m  
DS99663G(11/15)  
© 2015 IXYS CORPORATION, All Rights Reserved  

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