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IXTP75N10P PDF预览

IXTP75N10P

更新时间: 2024-11-06 14:56:15
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 320K
描述
Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡的器件解决方案。 这些器件包含了Polar技术平台,以实现低导通电阻(Rdson)。 Polar标准MOS

IXTP75N10P 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:2.27Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1000 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):75 A
最大漏源导通电阻:0.025 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):200 A认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTP75N10P 数据手册

 浏览型号IXTP75N10P的Datasheet PDF文件第2页浏览型号IXTP75N10P的Datasheet PDF文件第3页浏览型号IXTP75N10P的Datasheet PDF文件第4页浏览型号IXTP75N10P的Datasheet PDF文件第5页浏览型号IXTP75N10P的Datasheet PDF文件第6页 
PolarHTTM  
Power MOSFET  
IXTA 75N10P  
IXTP 75N10P  
IXTQ 75N10P  
VDSS  
ID25  
RDS(on)  
= 100 V  
=
75 A  
25 mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
Symbol  
Test Conditions  
Maximum Ratings  
G
S
VDSS  
VDGR  
TJ = 25° C to 175° C  
TJ = 25° C to 175° C; RGS = 1 MΩ  
100  
100  
V
V
(TAB)  
VGS  
Continuous  
Transient  
20  
30  
V
V
TO-220 (IXTP)  
VGSM  
ID25  
IDM  
IAR  
TC =25° C  
75  
200  
50  
A
A
A
TC = 25° C, pulse width limited by TJM  
TC =25° C  
(TAB)  
G
D
S
EAR  
EAS  
TC =25° C  
TC =25° C  
30  
mJ  
J
1.0  
TO-3P (IXTQ)  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 10 Ω  
,
10  
V/ns  
TC =25° C  
360  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
G
D
S
(TAB)  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Md  
Mounting torque  
(TO-3P / TO-220)  
1.13/10 Nm/lb.in.  
Weight  
TO-3P  
TO-220  
TO-263  
5.5  
4
3
g
g
g
Features  
l
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
l
l
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 20 VDC, VDS = 0  
100  
V
V
Advantages  
3.0  
5.5  
l
Easy to mount  
Space savings  
l
100  
nA  
l
High power density  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
21  
25 mΩ  
Pulse test, t 300 µs, duty cycle d 2 %  
DS99158E(12/05)  
© 2006 IXYS All rights reserved  

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