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IXTP6N50P PDF预览

IXTP6N50P

更新时间: 2024-11-06 14:56:55
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 820K
描述
Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡的器件解决方案。 这些器件纳入了Polar技术平台,以实现低导通电阻(RDS(ON))。 Polar标准M

IXTP6N50P 数据手册

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PolarHVTM  
Power MOSFET  
VDSS = 500 V  
ID25 6 A  
RDS(on) 1.1 Ω  
IXTA 6N50P  
IXTP 6N50P  
=
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-263 (IXTA
VDSS  
VDGR  
TJ = 25° C to 150° C  
TJ = 25° C to 150° C; RGS = 1 MΩ  
500  
500  
V
V
VGSS  
VGSM  
Continuous  
Transient  
30  
4
V
G
S
(TAB)  
ID25  
IDM  
TC =25° C  
TC = 25° C, pulse width limited by TJM  
6
15  
A
A
TO-220 (IXTP)  
IAR  
EAR  
EAS  
TC =25° C  
TC =25° C  
TC =25° C  
6
20  
250  
mJ  
mJ  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD V
TJ 150° C, RG = 18 Ω  
V/ns  
(TAB)  
G
D
S
TC = 25° C  
100  
W
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
TSOLD  
1.6 mm (0.06.) from case for 10
Plastic bos  
300  
260  
°C  
°C  
Md  
Mountin
220)  
1.13/10 Nm/lb.in.  
Features  
Weight  
4
3
g
g
l
l
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
l
Symbol  
itions  
Characteristic Values  
(TJ = 25° C, unlerwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 50µA  
VGS = 30 V, VDS = 0V  
500  
V
V
Advantages  
3.0  
5.0  
l
Easy to mount  
Space savings  
l
100  
nA  
l
High power density  
IDSS  
VDS = VDSS  
VGS = 0 V  
5
50  
µA  
µA  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
1.1  
Pulse test, t 300 µs, duty cycle d 2 %  
DS99447E(04/06)  
© 2006 IXYS All rights reserved  

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