Datasheet > IXTP48N20T

IXTP48N20T

更新时间： 2024-11-19 14:56:47

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
6页	213K
描述
沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(on)极低，因此确保了非常低的功率耗损。再结合广泛的工作结温范围（从-40 °C到175 °C），这些产品非常适合汽车应用以及其他处

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中文翻译

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数据手册

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IXTP48N20T 数据手册

Trench^TM

Power MOSFET

IXTA48N20T

IXTP48N20T

IXTQ48N20T

V_DSS

I_D25

= 200V

= 48A

R_DS(on)≤ 50mΩ

TO-263 AA (IXTA)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

D (Tab)

TO-220AB (IXTP)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 175°C

T_J= 25°C to 175°C, R_GS= 1MΩ

200

V_GSM

Transient

± 30

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

130

D (Tab)

TO-3P (IXTQ)

I_A

E_AS

T_C= 25°C

500

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 175°C

T_C= 25°C

V/ns

250

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

°C

D (Tab)

= Drain

G = Gate

S = Source

Tab = Drain

T_L

T_SOLD

1.6mm (0.062in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

Features

F_C

Mounting Force (TO-263)

Mounting Torque (TO-220 & TO-3P)

10..65/2.2..14.6

1.13/10

Nm/lb.in

M_d

^zHigh Current Handling Capability

^zAvalanche Rated

Weight

TO-263

TO-220

TO-3P

2.5

3.0

5.5

^zFast Intrinsic Rectifier

Low R_DS(on)

Advantages

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

200

2.5

Typ.

Max.

Easy to Mount

Space Savings

High Power Density

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= ± 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

4.5

Applications

± 100 nA

μA

I_DSS

^zDC-DC Converters

^zBattery Chargers

T_J= 150°C

250 μA

^zSwitch-Mode and Resonant-Mode

Power Supplies

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

50 mΩ

^zDC Choppers

^zAC Motor Drives

^zUninterruptible Power Supplies

^zHigh Speed Power Switching

Applications

DS99948A(02/10)

12 3 4 5 6

中文翻译

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