5秒后页面跳转
IXTP130N10T PDF预览

IXTP130N10T

更新时间: 2024-02-04 11:50:15
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
5页 154K
描述
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

IXTP130N10T 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.74
Base Number Matches:1

IXTP130N10T 数据手册

 浏览型号IXTP130N10T的Datasheet PDF文件第2页浏览型号IXTP130N10T的Datasheet PDF文件第3页浏览型号IXTP130N10T的Datasheet PDF文件第4页浏览型号IXTP130N10T的Datasheet PDF文件第5页 
TrenchMVTM  
Power MOSFET  
IXTA130N10T  
IXTP130N10T  
VDSS = 100V  
ID25 = 130A  
RDS(on) 9.1mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
G
S
Symbol  
Test Conditions  
Maximum Ratings  
(TAB)  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
TO-220 (IXTP)  
VGSM  
Transient  
± 30  
V
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
130  
75  
350  
A
A
A
G
(TAB)  
D
S
IA  
EAS  
TC = 25°C  
TC = 25°C  
65  
A
500  
mJ  
G = Gate  
D
= Drain  
PD  
TC = 25°C  
360  
W
S = Source  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
z Ultra-low On Resistance  
z Unclamped Inductive Switching (UIS)  
rated  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
z Low package inductance  
- easy to drive and to protect  
z 175 °C Operating Temperature  
Md  
Mounting torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-220  
TO-263  
3.0  
2.5  
g
g
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
100  
V
V
z
Automotive  
- Motor Drives  
- 42V Power Bus  
2.5  
4.5  
± 200 nA  
μA  
- ABS Systems  
z
DC/DC Converters and Off-line UPS  
Primary Switch for 24V and 48V  
Systems  
Distributed Power Architechtures  
IDSS  
VDS = VDSS  
VGS = 0V  
5
z
TJ = 150°C  
250 μA  
z
RDS(on)  
VGS = 10V, ID = 25A, Notes 1, 2  
9.1 mΩ  
and VRMs  
Electronic Valve Train Systems  
High Current Switching  
z
z
Applications  
High Voltage Synchronous Recifier  
z
DS99649B(07/08)  
© 2008 IXYS CORPORATION, All rights reserved  

IXTP130N10T 替代型号

型号 品牌 替代类型 描述 数据表
IXTQ130N10T IXYS

完全替代

TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated
IXFP130N10T2 IXYS

类似代替

TrenchT2 HiperFET Power MOSFET
IXFP130N10T IXYS

类似代替

TrenchMV Power MOSFET HiperFET

与IXTP130N10T相关器件

型号 品牌 获取价格 描述 数据表
IXTP130N15X4 LITTELFUSE

获取价格

这些器件采用电荷补偿原理和专有工艺技术开发,打造出电阻RDS(on)和栅极电荷Qg显著更低
IXTP130N15X4A LITTELFUSE

获取价格

这些IXTP130N15X4A器件采用电荷补偿原理和专有工艺技术开发,打造出电阻RDS(o
IXTP140N055T2 LITTELFUSE

获取价格

这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能
IXTP140N12T2 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTP140P05T IXYS

获取价格

TrenchP Power MOSFETs P-Channel Enhancement Mode Avalanche Rated
IXTP140P05T LITTELFUSE

获取价格

Trench P通道MOSFET非常适合“高压侧”开关应用,这些应用可采用简单的接地参考驱
IXTP14N60P IXYS

获取价格

PolarHVTM Power MOSFET
IXTP14N60P LITTELFUSE

获取价格

Power Field-Effect Transistor, 14A I(D), 600V, 0.55ohm, 1-Element, P-Channel, Silicon, Met
IXTP14N60PM IXYS

获取价格

Power Field-Effect Transistor, 7A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Meta
IXTP14N60PM LITTELFUSE

获取价格

Power Field-Effect Transistor, 7A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Meta