Preliminary Technical Information
TrenchT2TM GigaMOSTM
Power MOSFET
VDSS = 55V
ID25 = 550A
RDS(on) ≤ 1.30mΩ
IXTN550N055T2
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
miniBLOC, SOT-227
E153432
S
Symbol
VDSS
Test Conditions
Maximum Ratings
G
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
55
55
V
V
VDGR
VGSS
VGSM
Continuous
Transient
±20
±30
V
V
S
D
D = Drain
ID25
TC = 25°C (Chip Capability)
550
A
IL(RMS)
IDM
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
200
1650
A
A
G = Gate
S = Source
IA
TC = 25°C
TC = 25°C
200
3
A
J
EAS
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
PD
TC = 25°C
940
W
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +175
°C
°C
°C
Features
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
z International Standard Package
z miniBLOC, with Aluminium Nitride
Isolation
VISOL
50/60 Hz, RMS
IISOL ≤ 1mA
t = 1 minute
t = 1 second
2500
3000
V~
V~
z 175°C Operating Temperature
z Isolation Voltage 2500 V~
z High Current Handling Capability
z Fast Intrinsic Diode
Md
Mounting Torque
Terminal Connection Torque
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
Weight
30
g
z Avalanche Rated
z
Low RDS(on)
Advantages
z
Easy to Mount
Space Savings
High Power Density
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
z
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VGS = ±20V, VDS = 0V
VDS = VDSS, VGS = 0V
55
V
V
Applications
2.0
4.0
z DC-DC Converters and Off-Line UPS
z Primary-Side Switch
z High Speed Power Switching
Applications
±200 nA
IDSS
10 μA
1 mA
TJ = 150°C
RDS(on)
VGS = 10V, ID = 100A, Note 1
1.10
1.30 mΩ
DS100173A(12/09)
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