是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 6 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 135 W | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTM6N80 | IXYS |
获取价格 |
N-Channel Enhancement Mode | |
IXTM6N80A | IXYS |
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N-Channel Enhancement Mode | |
IXTM6N90 | IXYS |
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Standard Power MOSFET | |
IXTM6N90A | IXYS |
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Standard Power MOSFET | |
IXTM6P25 | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 6A I(D) | TO-3 | |
IXTM75N08 | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTM75N10 | IXYS |
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MegaMOSFET | |
IXTM7N45 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 7A I(D) | TO-204AC | |
IXTM7N45A | LITTELFUSE |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTM7N50 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7A I(D) | TO-204AC |