是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | not_compliant |
风险等级: | 5.92 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 13 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 175 W |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTL14N60 | IXYS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTL14P20 | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 14A I(D) | TO-254 | |
IXTL150 | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTL150 | LITTELFUSE |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTL15N20 | LITTELFUSE |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTL17P10 | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 17A I(D) | TO-254 | |
IXTL18N50 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 18A I(D) | TO-254 | |
IXTL21P20 | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 21A I(D) | TO-254 | |
IXTL24N10 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 24A I(D) | TO-254 | |
IXTL24N40 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 24A I(D) | TO-254 |