Datasheet > IXTK90P20P

IXTK90P20P

更新时间： 2024-11-06 14:56:15

品牌	Logo	应用领域
力特 - LITTELFUSE		开关栅栅极
页数	文件大小	规格书
6页	152K
描述
Polar? P通道MOSFET采用我们的Polar技术平台制造，相比传统产品将通态电阻(RDSon)显著降低30%，并将栅极电荷(Qg)降低40%，从而降低了传导损失，并能提供出色的开关性能。

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中文翻译

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技术参数
数据手册

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IXTK90P20P 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.72
Base Number Matches：	1

IXTK90P20P 数据手册

PolarP^TM

Power MOSFET

V_DSS= - 200V

I_D25= - 90A

IXTK90P20P

IXTX90P20P

R_DS(on)



44m

P-Channel Enhancement Mode

Avalanche Rated

TO-264 (IXTK)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

- 200

Tab

V_DGR

V_GSS

V_GSM

Continuous

Transient

20

30

PLUS247 (IXTX)

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

- 90

- 270

I_A

E_AS

T_C= 25C

- 90

3.5

Tab

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150C

T_C= 25C

V/ns

G = Gate

S = Source

= Drain

890

Tab = Drain

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C

Features

^International Standard Packages

^Rugged PolarP^TMProcess

^Avalanche Rated

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

M_d

Mounting Force

Mounting Torque

(PLUS247)

(TO-264)

20..120 / 4.5..27

1.13 / 10

N/lb

Nm/lb.in

^Fast Intrinsic Diode

^Low Package Inductance

Weight

PLUS247

TO-264

Advantages



Easy to Mount

Space Savings

High Power Density



Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

- 200

- 2.0

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= - 250A

V_DS= V_GS, I_D= -1mA

V_GS= 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V



High-Side Switches

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

- 4.5



100 nA



I_DSS

- 50 A

- 250 A



Current Regulators

T_J= 125C

R_DS(on)

V_GS= -10V, I_D= 0.5 • I_D25, Note 1

44 m

DS99933D(6/16)

12 3 4 5 6

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