PolarPTM
Power MOSFET
VDSS = -100V
ID25 = -170A
RDS(on) 14m
IXTK170P10P
IXTX170P10P
P-Channel Enhancement Mode
Avalanche Rated
TO-264 (IXTK)
Symbol
VDSS
Test Conditions
Maximum Ratings
G
D
S
TJ = 25°C to 150C
TJ = 25C to 150C, RGS = 1M
-100
-100
V
V
VDGR
Tab
VGSS
VGSM
Continuous
Transient
20
30
V
V
PLUS247 (IXTX)
ID25
TC = 25C (Chip Capability)
-170
A
ILRMS
IDM
Lead Current Limit, RMS
TC = 25C, Pulse Width Limited by TJM
-160
- 510
A
A
IA
TC = 25C
TC = 25C
-170
3.5
A
J
G
D
Tab
S
EAS
dv/dt
PD
IS IDM, VDD VDSS, TJ 150C
TC = 25C
10
V/ns
W
G = Gate
S = Source
D
= Drain
Tab = Drain
890
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
C
C
C
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Features
International Standard Packages
Rugged PolarPTM Process
High Current Handling Capability
Fast Intrinsic Diode
Md
Mounting Force
Mounting Forque
(PLUS247)
(TO-264)
20..120 / 4.5..27
1.13 / 10
N/lb.
Nm/lb.in.
Weight
PLUS247
TO-264
6
10
g
g
Avalanche Rated
Low Package Inductance
Advantages
Symbol
Test Conditions
Characteristic Values
Easy to Mount
Space Savings
High Power Density
(TJ = 25C, Unless Otherwise Specified)
Min.
-100
- 2.0
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = - 250A
VDS = VGS, ID = -1mA
VGS = 20V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
- 4.0
Applications
100 nA
High-Side Switches
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
IDSS
- 50 A
- 250 A
TJ = 125C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
14 m
Current Regulators
DS99974C(5/17)
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