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IXTK120P20T PDF预览

IXTK120P20T

更新时间: 2024-10-01 10:34:19
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
6页 228K
描述
Power Field-Effect Transistor, 120A I(D), 200V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3

IXTK120P20T 数据手册

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TrenchPTM  
Power MOSFETs  
VDSS = - 200V  
ID25 = - 120A  
IXTK120P20T  
IXTX120P20T  
RDS(on)  
30mΩ  
trr  
300ns  
P-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-264 (IXTK)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
S
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 200  
- 200  
V
V
VDGR  
Tab  
VGSS  
VGSM  
Continuous  
Transient  
±15  
±25  
V
V
PLUS247 (IXTX)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
-120  
A
A
- 400  
IA  
EAS  
TC = 25°C  
TC = 25°C  
-100  
3
A
J
G
D
S
Tab  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
10  
V/ns  
W
1040  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
z
International Standard Packages  
Avalanche Rated  
Extended FBSOA  
Fast Intrinsic Recitifier  
Low RDS(ON) and QG  
z
z
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
z
z
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
- 200  
- 2.5  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ±15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z
- 4.5  
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
Current Regulators  
Battery Charger Applications  
z
±200 nA  
z
z
IDSS  
- 25 μA  
z
TJ = 125°C  
- 300 μA  
z
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
30 mΩ  
DS100401B(5/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  

IXTK120P20T 替代型号

型号 品牌 替代类型 描述 数据表
IXTX120P20T IXYS

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Power Field-Effect Transistor, 120A I(D), 200V, 0.03ohm, 1-Element, P-Channel, Silicon, Me

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