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IXTK102N30P PDF预览

IXTK102N30P

更新时间: 2024-11-05 03:13:43
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
5页 224K
描述
PolarHT Power MOSFET

IXTK102N30P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-264AA
包装说明:TO-264, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:8.39其他特性:AVALANCHE RATED
雪崩能效等级(Eas):2500 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:300 V
最大漏极电流 (ID):102 A最大漏源导通电阻:0.033 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-264AA
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):250 A
认证状态:Not Qualified表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXTK102N30P 数据手册

 浏览型号IXTK102N30P的Datasheet PDF文件第2页浏览型号IXTK102N30P的Datasheet PDF文件第3页浏览型号IXTK102N30P的Datasheet PDF文件第4页浏览型号IXTK102N30P的Datasheet PDF文件第5页 
PolarHTTM  
Power MOSFET  
VDSS = 300 V  
ID25 = 102 A  
RDS(on) 33 mΩ  
IXTK 102N30P  
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-264 (IXTK)  
VDSS  
VDGR  
TJ = 25° C to 150° C  
TJ = 25° C to 150° C; RGS = 1 MΩ  
300  
300  
V
V
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
ID25  
TC =25° C  
102  
75  
A
A
A
(TAB)  
S
ID(RMS)  
IDM  
External lead current limit  
TC = 25° C, pulse width limited by TJM  
250  
IAR  
TC =25° C  
60  
A
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
EAR  
EAS  
TC =25° C  
TC =25° C  
60  
mJ  
J
2.5  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 4 Ω  
,
10  
V/ns  
Features  
l
International standard package  
Unclamped Inductive Switching (UIS)  
rated  
TC =25° C  
700  
W
l
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
l
Low package inductance  
- easy to drive and to protect  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
Advantages  
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
l
Easy to mount  
Space savings  
High power density  
Weight  
Symbol  
TO-264  
10  
g
l
l
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 500µA  
VGS = 20 VDC, VDS = 0  
300  
V
V
2.5  
5.0  
200  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
33 mΩ  
Pulse test, t 300 µs, duty cycle d 2 %  
DS99130E(12/05)  
© 2006 IXYS All rights reserved  

IXTK102N30P 替代型号

型号 品牌 替代类型 描述 数据表
IXFK102N30P IXYS

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