是否Rohs认证: | 不符合 | 生命周期: | Active |
Reach Compliance Code: | unknown | 风险等级: | 5.63 |
Is Samacsys: | N | 配置: | Single |
最大漏极电流 (Abs) (ID): | 19 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 200 W | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
IXTH19P20 | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 19A I(D) | TO-218VAR |
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|
IXTH1N100 | IXYS | High Voltage MOSFET |
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|
IXTH1N170DHV | LITTELFUSE | Power Field-Effect Transistor, |
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IXTH1N170DHV | IXYS | Power Field-Effect Transistor, |
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|
IXTH1N200P3 | IXYS | Power Field-Effect Transistor, |
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|
IXTH1N200P3 | LITTELFUSE | Power Field-Effect Transistor, |
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