生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PUFM-X4 |
Reach Compliance Code: | unknown | 风险等级: | 5.83 |
最大集电极电流 (IC): | 61 A | 集电极-发射极最大电压: | 1000 V |
配置: | SINGLE WITH BUILT-IN DIODE | JESD-30 代码: | R-PUFM-X4 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 330 W |
最大功率耗散 (Abs): | 330 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
VCEsat-Max: | 3.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXSN55N120 | IXYS |
获取价格 |
High Voltage IGBT | |
IXSN55N120A | IXYS |
获取价格 |
High Voltage IGBT - Short Circuit SOA Capability | |
IXSN55N120AU1 | IXYS |
获取价格 |
High Voltage IGBT with Diode - Short Circuit SOA Capability | |
IXSN55N120U1 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 83A I(C) | SOT-227B | |
IXSN62N60AU1 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 90A I(C) | SOT-227B | |
IXSN62N60U1 | IXYS |
获取价格 |
IGBT with Diode - Short Circuit SOA Capability | |
IXSN80N60A | IXYS |
获取价格 |
High Current IGBT - Short Circuit SOA Capability | |
IXSN80N60AU1 | IXYS |
获取价格 |
IGBT with Diode - Short Circuit SOA Capability | |
IXSN80N60B | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), N-Channel, MINIBLOC-4 | |
IXSN80N60BD1 | IXYS |
获取价格 |
IGBT with Diode Short Circuit SOA Capability |