生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.82 |
最大集电极电流 (IC): | 53 A | 集电极-发射极最大电压: | 600 V |
最大降落时间(tf): | 800 ns | 门极发射器阈值电压最大值: | 8 V |
门极-发射极最大电压: | 20 V | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 205 W |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXSN52N60AU1 | IXYS |
获取价格 |
IGBT with Diode Combi Pack - Short Circuit SOA Capability | |
IXSN55N100U1 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 61A I(C) | SOT-227B | |
IXSN55N120 | IXYS |
获取价格 |
High Voltage IGBT | |
IXSN55N120A | IXYS |
获取价格 |
High Voltage IGBT - Short Circuit SOA Capability | |
IXSN55N120AU1 | IXYS |
获取价格 |
High Voltage IGBT with Diode - Short Circuit SOA Capability | |
IXSN55N120U1 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 83A I(C) | SOT-227B | |
IXSN62N60AU1 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 90A I(C) | SOT-227B | |
IXSN62N60U1 | IXYS |
获取价格 |
IGBT with Diode - Short Circuit SOA Capability | |
IXSN80N60A | IXYS |
获取价格 |
High Current IGBT - Short Circuit SOA Capability | |
IXSN80N60AU1 | IXYS |
获取价格 |
IGBT with Diode - Short Circuit SOA Capability |