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IXKN75N60C PDF预览

IXKN75N60C

更新时间: 2024-11-06 14:56:15
品牌 Logo 应用领域
力特 - LITTELFUSE 散热片
页数 文件大小 规格书
5页 283K
描述
此系列基于超级结技术的功率MOSFET拥有600V-800V级别MOSFET中最低的RDS(on)。 内部DCB隔离简化了组装并减小了从结到散热片之间的热阻。 这些器件经过了雪崩评级,因此可确保稳定可靠的运行。 功能与特色: 应用: 优点:

IXKN75N60C 数据手册

 浏览型号IXKN75N60C的Datasheet PDF文件第2页浏览型号IXKN75N60C的Datasheet PDF文件第3页浏览型号IXKN75N60C的Datasheet PDF文件第4页浏览型号IXKN75N60C的Datasheet PDF文件第5页 
IXKN 75N60C  
CoolMOS™ 1) Power MOSFET  
VDSS  
ID25  
= 600V  
= 75A  
RDS(on) max = 36m  
N-Channel Enhancement Mode  
Low RDSon, High VDSS MOSFET  
D
S
miniBLOC, SOT-227 B  
S
G
G
S
S
D
G = Gate  
D = Drain  
S = Source  
Either source terminal at miniBLOC can be  
used as main or kelvin source  
Features  
MOSFET  
• miniBLOC package  
Symbol  
VDSS  
Conditions  
Maximum Ratings  
- Electrically isolated copper base  
- Lowcouplingcapacitancetotheheatsink  
for reduced EMI  
- High power dissipation due to AlN  
ceramic substrate  
TVJ = 25°C to 150°C  
600  
20  
V
VGS  
V
ID25  
ID90  
TC = 25°C  
TC = 90°C  
75  
50  
A
A
- International standard package SOT-227  
- Easy screw assembly  
• fast CoolMOS™ 1) power MOSFET  
ID puls  
pulse drain current, tp limited by TJmax  
250  
A
3rd generation  
EAS  
EAR  
ID = 10 A; L = 36 mH  
ID = 20 A; L = 5 mH  
TC = 25°C  
TC = 25°C  
1.8  
1
J
mJ  
- High blocking capability  
- Low on resistance  
- Avalanche rated for unclamped  
inductive switching (UIS)  
- Low thermal resistance  
due to reduced chip thickness  
• Enhanced total power density  
dv/dt  
VDS < VDSS; IF < 100A  
| diF /dt | < 100A/µs  
TVJ = 125°C  
6
V/ns  
Symbol  
Conditions  
Characteristic Values  
Applications  
(TVJ = 25°C, unless otherwise specified)  
• Switched mode power supplies (SMPS)  
• Uninterruptible power supplies (UPS)  
• Power factor correction (PFC)  
• Welding  
min. typ. max.  
RDSon  
VGS(th)  
IDSS  
VGS = 10 V; ID = ID90  
VDS = 20 V; ID = 5 mA  
VDS = VDSS; VGS = 0 V  
30  
36  
3.9  
50  
mW  
2.1  
V
• Inductive heating  
TVJ = 25°C  
TVJ = 125°C  
µA  
µA  
100  
1) CoolMOSis a trademark of  
Infineon Technologies AG.  
IGSS  
VGS  
=
20 V; VDS = 0 V  
200  
nA  
Qg  
Qgs  
Qgd  
500  
50  
240  
nC  
nC  
nC  
VGS = 0 to 10 V; VDS = 350 V; ID = 100 A  
td(on)  
tr  
td(off)  
tf  
20  
30  
110  
10  
ns  
ns  
ns  
ns  
VGS = 10 V; VDS = 380 V  
ID = 100 A; RG = 1.0 W  
VF  
(reverse conduction) IF = 37.5 A;VGS = 0 V  
0.9  
1.1  
V
RthJC  
0.22 K/W  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2010 IXYS All rights reserved  
20100609c  
1 - 4  

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