Datasheet > IXKN75N60C

IXKN75N60C

更新时间： 2024-11-19 14:56:15

品牌	Logo	应用领域
力特 - LITTELFUSE		散热片
页数	文件大小	规格书
5页	283K
描述
此系列基于超级结技术的功率MOSFET拥有600V-800V级别MOSFET中最低的RDS(on)。内部DCB隔离简化了组装并减小了从结到散热片之间的热阻。这些器件经过了雪崩评级，因此可确保稳定可靠的运行。功能与特色: 应用: 优点:

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IXKN75N60C 数据手册

IXKN 75N60C

CoolMOS^{™ 1)}Power MOSFET

V_DSS

I_D25

= 600V

= 75A

R_{DS(on) max}= 36mΩ

N-Channel Enhancement Mode

Low R_DSon, High V_DSSMOSFET

miniBLOC, SOT-227 B

G = Gate

D = Drain

S = Source

Either source terminal at miniBLOC can be

used as main or kelvin source

Features

MOSFET

• miniBLOC package

Symbol

V_DSS

Conditions

Maximum Ratings

- Electrically isolated copper base

- Lowcouplingcapacitancetotheheatsink

for reduced EMI

- High power dissipation due to AlN

ceramic substrate

T_VJ= 25°C to 150°C

600

V_GS

I_D25

I_D90

T_C= 25°C

T_C= 90°C

- International standard package SOT-227

- Easy screw assembly

• fast CoolMOS™ ¹⁾power MOSFET

I_{D puls}

pulse drain current, t_plimited by T_Jmax

250

3^rdgeneration

E_AS

E_AR

I_D= 10 A; L = 36 mH

I_D= 20 A; L = 5 mH

T_C= 25°C

1.8

- High blocking capability

- Low on resistance

- Avalanche rated for unclamped

inductive switching (UIS)

- Low thermal resistance

due to reduced chip thickness

• Enhanced total power density

dv/dt

V_DS< V_DSS; I_F< 100A

| di_F/dt | < 100A/µs

T_VJ= 125°C

V/ns

Symbol

Conditions

Characteristic Values

Applications

(T_VJ= 25°C, unless otherwise speciﬁed)

• Switched mode power supplies (SMPS)

• Uninterruptible power supplies (UPS)

• Power factor correction (PFC)

• Welding

min. typ. max.

R_DSon

V_GS(th)

I_DSS

V_GS= 10 V; I_D= I_D90

V_DS= 20 V; I_D= 5 mA

V_DS= V_DSS; V_GS= 0 V

3.9

2.1

• Inductive heating

T_VJ= 25°C

T_VJ= 125°C

µA

100

¹⁾CoolMOS^™is a trademark of

Inﬁneon Technologies AG.

I_GSS

V_GS

20 V; V_DS= 0 V

200

Q_g

Q_gs

Q_gd

500

240

V_GS= 0 to 10 V; V_DS= 350 V; I_D= 100 A

t_d(on)

t_r

t_d(off)

t_f

110

V_GS= 10 V; V_DS= 380 V

I_D= 100 A; R_G= 1.0 W

V_F

(reverse conduction) I_F= 37.5 A;V_GS= 0 V

0.9

1.1

R_thJC

0.22 K/W

IXYS reserves the right to change limits, test conditions and dimensions.

20100609c

1 - 4

12 3 4 5

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与IXKN75N60C相关器件

型号	品牌	获取价格	描述	数据表
IXKP10N60C5	LITTELFUSE	获取价格	Power Field-Effect Transistor, 600A I(D), 0.385ohm, 1-Element, N-Channel, Silicon, Metal-o
IXKP10N60C5M	LITTELFUSE	获取价格	Power Field-Effect Transistor, 5.4A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, M
IXKP10N60C5M	IXYS	获取价格	Power Field-Effect Transistor, 5.4A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, M
IXKP13N60C5	LITTELFUSE	获取价格	Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta
IXKP13N60C5M	IXYS	获取价格	Power Field-Effect Transistor, 6.5A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Met
IXKP13N60C5M	LITTELFUSE	获取价格	Power Field-Effect Transistor, 6.5A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Met
IXKP20N60C5	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXKP20N60C5M	LITTELFUSE	获取价格	Power Field-Effect Transistor, 7.6A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Met
IXKP24N60C5	IXYS	获取价格	Power Field-Effect Transistor, 24A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Me
IXKP24N60C5	LITTELFUSE	获取价格	Power Field-Effect Transistor,

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