Datasheet > IXKH47N60C

IXKH47N60C

更新时间： 2024-11-21 14:56:19

品牌	Logo	应用领域
力特 - LITTELFUSE		散热片
页数	文件大小	规格书
5页	212K
描述
此系列基于超级结技术的功率MOSFET拥有600V-800V级别MOSFET中最低的RDS(on)。内部DCB隔离简化了组装并减小了从结到散热片之间的热阻。这些器件经过了雪崩评级，因此可确保稳定可靠的运行。功能与特色: 应用: 优点:

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中文翻译

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数据手册

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IXKH47N60C 数据手册

IXKH 47N60C

CoolMOS^{™ 1)}Power MOSFET

V_DSS

I_D25

= 600V

= 47A

R_{DS(on) max}= 70mΩ

Low R_DSon, high V_DSS

Superjunction MOSFET

TO-247

tab

E72873

Features

MOSFET

• 3rd generation Superjunction power

MOSFET

- high blocking capability

- lowest resistance

Symbol

V_DSS

Conditions

Maximum Ratings

T_VJ= 25°C

600

V_GS

- avalanche rated for unclamped

inductive switching (UIS)

- low thermal resistance

due to reduced chip thickness

I_D25

I_D100

T_C= 25°C

T_C= 100°C

E_AS

E_AR

single pulse I_D= 10 A; T_C= 25°C

repetitive

1800

tbd

I_D= 20 A; T_C= 25°C

Applications

dV/dt

MOSFET dV/dt ruggedness V_DS= 0...480 V

tbd V/ns

• Switched mode power supplies (SMPS)

• Uninterruptible power supplies (UPS)

• Power factor correction (PFC)

• Welding

Symbol

Conditions

Characteristic Values

(T_VJ= 25°C, unless otherwise speciﬁed)

• Inductive heating

min. typ. max.

R_DSon

V_GS= 10 V; I_D= I_D100

V_DS= V_GS; I_D= 2 mA

mΩ

¹⁾CoolMOS^™is a trademark of

Inﬁneon Technologies AG.

V_GS(th)

I_DSS

V_DS= V_DSS; V_GS= 0 V

T_VJ= 25°C

T_VJ= 150°C

250

µA

I_GSS

V_GS20 V; V_DS= 0 V

100

650

C_iss

C_oss

V_GS= 0 V; V_DS= 100 V

f = 1 MHz

tbd

Q_g

Q_gs

Q_gd

255

110

V_GS= 0 to 10 V; V_DS= 350 V; I_D= 40 A

t_d(on)

t_r

t_d(off)

t_f

111

V_GS= 10 V; V_DS= 380 V

I_D= 47 A; R_G= 4.7 Ω

R_thJC

0.3 K/W

^cPulse test, t < 300 µs, duty cycle d < 2%

IXYS reserves the right to change limits, test conditions and dimensions.

20080523a

1 - 4

12 3 4 5

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