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IXKC40N60C PDF预览

IXKC40N60C

更新时间: 2024-11-20 14:56:47
品牌 Logo 应用领域
力特 - LITTELFUSE 散热片
页数 文件大小 规格书
5页 212K
描述
此系列基于超级结技术的功率MOSFET拥有600V-800V级别MOSFET中最低的RDS(on)。 内部DCB隔离简化了组装并减小了从结到散热片之间的热阻。 这些器件经过了雪崩评级,因此可确保稳定可靠的运行。 功能与特色: 应用: 优点:

IXKC40N60C 数据手册

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IXKC 40N60C  
CoolMOS™ 1) Power MOSFET  
VDSS  
ID25  
= 600V  
= 28A  
RDS(on) max = 95mΩ  
Electrically isolated back surface  
2500 V electrical isolation  
N-Channel Enhancement Mode  
Low RDSon, high VDSS MOSFET  
Ultra low gate charge  
ISOPLUS220TM  
D
G
G
D
S
q
isolated tab  
S
E72873  
Features  
MOSFET  
• Silicon chip on Direct-Copper-Bond  
substrate  
- high power dissipation  
- isolated mounting surface  
- 2500 V electrical isolation  
- low drain to tab capacitance (< 30 pF)  
• CoolMOS™ 1) power MOSFET  
- 3rd generation  
Symbol  
VDSS  
Conditions  
Maximum Ratings  
TVJ = 25°C  
600  
20  
V
VGS  
V
ID25  
ID90  
TC = 25°C  
TC = 90°C  
28  
19.2  
A
A
EAS  
EAR  
single pulse; ID = 10 A; TC = 25°C  
repetitive;  
690  
1
mJ  
mJ  
- high blocking capability  
- lowest resistance  
ID = 20 A; TC = 25°C  
- avalanche rated for unclamped  
inductive switching (UIS)  
- low thermal resistance  
due to reduced chip thickness  
• Enhanced total power density  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
RDSon  
VGS = 10 V; ID = 28 A  
80  
95  
mΩ  
Applications  
VGS(th)  
IDSS  
VDS = VGS; ID = 2 mA  
2.1  
3.9  
V
• Switched mode power supplies  
(SMPS)  
• Uninterruptible power supplies (UPS)  
• Power factor correction (PFC)  
• Welding  
VDS = 600 V; VGS = 0 V  
TVJ = 25°C  
VJ = 150°C  
50  
500  
µA  
µA  
T
IGSS  
VGS  
=
20 V; VDS = 0 V  
200  
230  
nA  
Ciss  
Coss  
VGS = 0 V; VDS = 25 V  
f = 1 MHz  
4800  
1560  
pF  
pF  
• Inductive heating  
• PDP and LCD adapter  
Qg  
Qgs  
Qgd  
175  
22  
66  
nC  
nC  
nC  
Advantages  
VGS = 0 to 10 V; VDS = 350 V; ID = 40 A  
• Easy assembly:  
no screws or isolation foils required  
• Space savings  
• High power density  
• High reliability  
td(on)  
tr  
td(off)  
tf  
10  
5
67  
4.5  
ns  
ns  
ns  
ns  
VGS = 13 V; VDS = 380 V  
ID = 40 A; RG = 1.5 Ω; TVJ = 125°C  
RthJC  
0.6 K/W  
1) CoolMOSis a trademark of  
Infineon Technologies AG.  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2008 IXYS All rights reserved  
20080523a  
1 - 4  

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